Compensation processes in MBE grown ZnSe: N

K. A. Prior

Research output: Contribution to journalArticle

Abstract

Over the past few years Nitrogen has been found to be by far the best dopant to use in the production of p-type ZnSe, although it can be highly compensated. This review presents evidence for compensation within ZnSe:N due to the presence of selenium vacancy and dopant-vacancy clusters, followed by a comparison of the models which attempt to calculate the degree of compensation and then discuss evidence for the generation and motion of point defects within ZnSe:N at room temperature.

Original languageEnglish
Pages (from-to)11-16
Number of pages6
JournalMaterials Science Forum
Volume182-184
Publication statusPublished - 1995
EventProceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria
Duration: 26 Sep 199428 Sep 1994

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