Abstract
Over the past few years Nitrogen has been found to be by far the best dopant to use in the production of p-type ZnSe, although it can be highly compensated. This review presents evidence for compensation within ZnSe:N due to the presence of selenium vacancy and dopant-vacancy clusters, followed by a comparison of the models which attempt to calculate the degree of compensation and then discuss evidence for the generation and motion of point defects within ZnSe:N at room temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 11-16 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 182-184 |
| Publication status | Published - 1995 |
| Event | Proceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria Duration: 26 Sept 1994 → 28 Sept 1994 |