Over the past few years Nitrogen has been found to be by far the best dopant to use in the production of p-type ZnSe, although it can be highly compensated. This review presents evidence for compensation within ZnSe:N due to the presence of selenium vacancy and dopant-vacancy clusters, followed by a comparison of the models which attempt to calculate the degree of compensation and then discuss evidence for the generation and motion of point defects within ZnSe:N at room temperature.
|Number of pages||6|
|Journal||Materials Science Forum|
|Publication status||Published - 1995|
|Event||Proceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria|
Duration: 26 Sept 1994 → 28 Sept 1994