Compensation in p-type ZnSe based semiconductors

K. A. Prior, W. Meredith, G. D. Brownlie, Z Zhu, P. J. Thompson, J S Milnes, I. S. Hauksson, G. Horsburgh, T. A. Steele, S. Y. Wang, B. C. Cavenett

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Over the past few years nitrogen has been shown to be by far the best dopant to use in the production of p-type ZnSe, although it is often highly compensated. This review describes the evidence for compensation in ZnSe:N due to the presence of selenium vacancy complexes and also more recent evidence for the presence of other compensating donors and deep acceptors. The use of hydrogen plasma exposure to reduce the concentrations of these complex species is discussed. Various models have previously been presented to explain the compensation of ZnSe, and here we discuss the role of surface states in the pinning of the Fermi level and its effect on compensation. Finally, we show that the compensating selenium vacancies have been found by many authors to be mobile and discuss the mechanisms which may account for this behaviour. © 1997 Elsevier Science S.A.

Original languageEnglish
Pages (from-to)9-15
Number of pages7
JournalMaterials Science and Engineering: B
Volume43
Issue number1-3
Publication statusPublished - Jan 1997
EventMaterials Science & Engineering B-Solid State Materials for Advanced Technology -
Duration: 1 Jan 1997 → …

Keywords

  • Compensation
  • Deep levels
  • N doping
  • ZnSe

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