Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

Z Zhu; G. D. Brownlie; G. Horsburgh; P. J. Thompson; S. Y. Wang; K. A. Prior; B. C. Cavenett

Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

Z Zhu, G. D. Brownlie, G. Horsburgh, P. J. Thompson, S. Y. Wang, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence and photoluminescence excitation spectroscopy. A deep acceptor and a deep donor with ionization energies of ~ 170 and ~ 88 meV are reported for the nitrogen d-doped layers. These two deep centres are assigned to N-clusters, i.e., N_Se-Zn-N_Se for the deep acceptor and N_Se-N_Zn for the deep donor.

Original language	English
Pages (from-to)	248-251
Number of pages	4
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
Publication status	Published - Feb 1996

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title = "Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy",

abstract = "The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence and photoluminescence excitation spectroscopy. A deep acceptor and a deep donor with ionization energies of \textasciitilde{} 170 and \textasciitilde{} 88 meV are reported for the nitrogen d-doped layers. These two deep centres are assigned to N-clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor.",

author = "Z Zhu and Brownlie, \{G. D.\} and G. Horsburgh and Thompson, \{P. J.\} and Wang, \{S. Y.\} and Prior, \{K. A.\} and Cavenett, \{B. C.\}",

year = "1996",

month = feb,

language = "English",

volume = "159",

pages = "248--251",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

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TY - JOUR

T1 - Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

AU - Zhu, Z

AU - Brownlie, G. D.

AU - Horsburgh, G.

AU - Thompson, P. J.

AU - Wang, S. Y.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1996/2

Y1 - 1996/2

N2 - The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence and photoluminescence excitation spectroscopy. A deep acceptor and a deep donor with ionization energies of ~ 170 and ~ 88 meV are reported for the nitrogen d-doped layers. These two deep centres are assigned to N-clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor.

AB - The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence and photoluminescence excitation spectroscopy. A deep acceptor and a deep donor with ionization energies of ~ 170 and ~ 88 meV are reported for the nitrogen d-doped layers. These two deep centres are assigned to N-clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor.

UR - https://www.scopus.com/pages/publications/0030562489

M3 - Article

SN - 0022-0248

VL - 159

SP - 248

EP - 251

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

Abstract

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