Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

Z Zhu, G. D. Brownlie, G. Horsburgh, P. J. Thompson, S. Y. Wang, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence and photoluminescence excitation spectroscopy. A deep acceptor and a deep donor with ionization energies of ~ 170 and ~ 88 meV are reported for the nitrogen d-doped layers. These two deep centres are assigned to N-clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor.

Original languageEnglish
Pages (from-to)248-251
Number of pages4
JournalJournal of Crystal Growth
Volume159
Issue number1-4
Publication statusPublished - Feb 1996

Fingerprint

photoluminescence
nitrogen
nitrogen plasma
spectroscopy
excitation
molecular beam epitaxy
ionization
energy

Cite this

Zhu, Z., Brownlie, G. D., Horsburgh, G., Thompson, P. J., Wang, S. Y., Prior, K. A., & Cavenett, B. C. (1996). Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy. Journal of Crystal Growth, 159(1-4), 248-251.
Zhu, Z ; Brownlie, G. D. ; Horsburgh, G. ; Thompson, P. J. ; Wang, S. Y. ; Prior, K. A. ; Cavenett, B. C. / Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy. In: Journal of Crystal Growth. 1996 ; Vol. 159, No. 1-4. pp. 248-251.
@article{cee20b1bf06f4e089434791a73d43bec,
title = "Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy",
abstract = "The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence and photoluminescence excitation spectroscopy. A deep acceptor and a deep donor with ionization energies of ~ 170 and ~ 88 meV are reported for the nitrogen d-doped layers. These two deep centres are assigned to N-clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor.",
author = "Z Zhu and Brownlie, {G. D.} and G. Horsburgh and Thompson, {P. J.} and Wang, {S. Y.} and Prior, {K. A.} and Cavenett, {B. C.}",
year = "1996",
month = "2",
language = "English",
volume = "159",
pages = "248--251",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

Zhu, Z, Brownlie, GD, Horsburgh, G, Thompson, PJ, Wang, SY, Prior, KA & Cavenett, BC 1996, 'Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy', Journal of Crystal Growth, vol. 159, no. 1-4, pp. 248-251.

Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy. / Zhu, Z; Brownlie, G. D.; Horsburgh, G.; Thompson, P. J.; Wang, S. Y.; Prior, K. A.; Cavenett, B. C.

In: Journal of Crystal Growth, Vol. 159, No. 1-4, 02.1996, p. 248-251.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

AU - Zhu, Z

AU - Brownlie, G. D.

AU - Horsburgh, G.

AU - Thompson, P. J.

AU - Wang, S. Y.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1996/2

Y1 - 1996/2

N2 - The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence and photoluminescence excitation spectroscopy. A deep acceptor and a deep donor with ionization energies of ~ 170 and ~ 88 meV are reported for the nitrogen d-doped layers. These two deep centres are assigned to N-clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor.

AB - The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence and photoluminescence excitation spectroscopy. A deep acceptor and a deep donor with ionization energies of ~ 170 and ~ 88 meV are reported for the nitrogen d-doped layers. These two deep centres are assigned to N-clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor.

UR - http://www.scopus.com/inward/record.url?scp=0030562489&partnerID=8YFLogxK

M3 - Article

VL - 159

SP - 248

EP - 251

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -