Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

Z Zhu, G. D. Brownlie, G. Horsburgh, P. J. Thompson, S. Y. Wang, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence and photoluminescence excitation spectroscopy. A deep acceptor and a deep donor with ionization energies of ~ 170 and ~ 88 meV are reported for the nitrogen d-doped layers. These two deep centres are assigned to N-clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor.

Original languageEnglish
Pages (from-to)248-251
Number of pages4
JournalJournal of Crystal Growth
Volume159
Issue number1-4
Publication statusPublished - Feb 1996

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    Zhu, Z., Brownlie, G. D., Horsburgh, G., Thompson, P. J., Wang, S. Y., Prior, K. A., & Cavenett, B. C. (1996). Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy. Journal of Crystal Growth, 159(1-4), 248-251.