The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence and photoluminescence excitation spectroscopy. A deep acceptor and a deep donor with ionization energies of ~ 170 and ~ 88 meV are reported for the nitrogen d-doped layers. These two deep centres are assigned to N-clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Publication status||Published - Feb 1996|