Compensating acceptors and donors in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

Z Zhu; G. D. Brownlie; G. Horsburgh; P. J. Thompson; S. Y. Wang; K. A. Prior; B. C. Cavenett

doi:10.1063/1.115091

Compensating acceptors and donors in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

Z Zhu, G. D. Brownlie, G. Horsburgh, P. J. Thompson, S. Y. Wang, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

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Abstract

The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). The temperature dependence of PL and PLE spectra obtained from the nitrogen d-doped layers is investigated in detail, and a deep acceptor and a deep donor with ionization energies of ~170 and ~88 meV are reported for the nitrogen d-doped layers. These two deep centers are assigned to N clusters, i.e., N_Se-Zn-N_Se for the deep acceptor and N_Se-N_Zn for the deep donor.© 1995 American Institute of Physics.

Original language	English
Pages (from-to)	2167-2169
Number of pages	3
Journal	Applied Physics Letters
Volume	67
Issue number	15
DOIs	https://doi.org/10.1063/1.115091
Publication status	Published - 9 Oct 1995

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title = "Compensating acceptors and donors in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy",

abstract = "The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). The temperature dependence of PL and PLE spectra obtained from the nitrogen d-doped layers is investigated in detail, and a deep acceptor and a deep donor with ionization energies of ~170 and ~88 meV are reported for the nitrogen d-doped layers. These two deep centers are assigned to N clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor.{\textcopyright} 1995 American Institute of Physics.",

author = "Z Zhu and Brownlie, {G. D.} and G. Horsburgh and Thompson, {P. J.} and Wang, {S. Y.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1995",

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T1 - Compensating acceptors and donors in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

AU - Zhu, Z

AU - Brownlie, G. D.

AU - Horsburgh, G.

AU - Thompson, P. J.

AU - Wang, S. Y.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1995/10/9

Y1 - 1995/10/9

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AB - The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). The temperature dependence of PL and PLE spectra obtained from the nitrogen d-doped layers is investigated in detail, and a deep acceptor and a deep donor with ionization energies of ~170 and ~88 meV are reported for the nitrogen d-doped layers. These two deep centers are assigned to N clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor.© 1995 American Institute of Physics.

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DO - 10.1063/1.115091

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SN - 0003-6951

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EP - 2169

JO - Applied Physics Letters

JF - Applied Physics Letters

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Compensating acceptors and donors in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

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