Compensating acceptors and donors in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

Z Zhu, G. D. Brownlie, G. Horsburgh, P. J. Thompson, S. Y. Wang, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

The compensating acceptors and donors in nitrogen d-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). The temperature dependence of PL and PLE spectra obtained from the nitrogen d-doped layers is investigated in detail, and a deep acceptor and a deep donor with ionization energies of ~170 and ~88 meV are reported for the nitrogen d-doped layers. These two deep centers are assigned to N clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor.© 1995 American Institute of Physics.

Original languageEnglish
Pages (from-to)2167-2169
Number of pages3
JournalApplied Physics Letters
Volume67
Issue number15
DOIs
Publication statusPublished - 9 Oct 1995

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