Comparison of the p-type dopants K and N in ZnSe

H. Stewart; J. Simpson; S. Y. Wang; I. Hauksson; S. J A Adams; K. A. Prior; B. C. Cavenett

Comparison of the p-type dopants K and N in ZnSe

H. Stewart, J. Simpson, S. Y. Wang, I. Hauksson, S. J A Adams, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report the first use of an electrochemical cell to dope ZnSe with potassium and the comparison of ZnSe: K with nitrogen doped ZnSe:N. At growth temperatures of 280°C potassium produces much lower doping levels but shows clear acceptor bound excitonic peaks in photoluminescence (PL), while nitrogen shows strong donor-acceptor transitions. We also report the first observation of a decrease in the nitrogen doping level in the immediate subsurface region after storing samples at room temperature. © 1993.

Original language	English
Pages (from-to)	379-382
Number of pages	4
Journal	Journal of Crystal Growth
Volume	127
Issue number	1-4
Publication status	Published - 2 Feb 1993

Cite this

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title = "Comparison of the p-type dopants K and N in ZnSe",

abstract = "We report the first use of an electrochemical cell to dope ZnSe with potassium and the comparison of ZnSe: K with nitrogen doped ZnSe:N. At growth temperatures of 280°C potassium produces much lower doping levels but shows clear acceptor bound excitonic peaks in photoluminescence (PL), while nitrogen shows strong donor-acceptor transitions. We also report the first observation of a decrease in the nitrogen doping level in the immediate subsurface region after storing samples at room temperature. {\textcopyright} 1993.",

author = "H. Stewart and J. Simpson and Wang, {S. Y.} and I. Hauksson and Adams, {S. J A} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1993",

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language = "English",

volume = "127",

pages = "379--382",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Comparison of the p-type dopants K and N in ZnSe

AU - Stewart, H.

AU - Simpson, J.

AU - Wang, S. Y.

AU - Hauksson, I.

AU - Adams, S. J A

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1993/2/2

Y1 - 1993/2/2

N2 - We report the first use of an electrochemical cell to dope ZnSe with potassium and the comparison of ZnSe: K with nitrogen doped ZnSe:N. At growth temperatures of 280°C potassium produces much lower doping levels but shows clear acceptor bound excitonic peaks in photoluminescence (PL), while nitrogen shows strong donor-acceptor transitions. We also report the first observation of a decrease in the nitrogen doping level in the immediate subsurface region after storing samples at room temperature. © 1993.

AB - We report the first use of an electrochemical cell to dope ZnSe with potassium and the comparison of ZnSe: K with nitrogen doped ZnSe:N. At growth temperatures of 280°C potassium produces much lower doping levels but shows clear acceptor bound excitonic peaks in photoluminescence (PL), while nitrogen shows strong donor-acceptor transitions. We also report the first observation of a decrease in the nitrogen doping level in the immediate subsurface region after storing samples at room temperature. © 1993.

M3 - Article

SN - 0022-0248

VL - 127

SP - 379

EP - 382

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Comparison of the p-type dopants K and N in ZnSe

Abstract

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