Comparison of the p-type dopants K and N in ZnSe

H. Stewart, J. Simpson, S. Y. Wang, I. Hauksson, S. J A Adams, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticlepeer-review

Abstract

We report the first use of an electrochemical cell to dope ZnSe with potassium and the comparison of ZnSe: K with nitrogen doped ZnSe:N. At growth temperatures of 280°C potassium produces much lower doping levels but shows clear acceptor bound excitonic peaks in photoluminescence (PL), while nitrogen shows strong donor-acceptor transitions. We also report the first observation of a decrease in the nitrogen doping level in the immediate subsurface region after storing samples at room temperature. © 1993.

Original languageEnglish
Pages (from-to)379-382
Number of pages4
JournalJournal of Crystal Growth
Volume127
Issue number1-4
Publication statusPublished - 2 Feb 1993

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