Comparison of optical nonlinearities in piezoelectric strained [111]- and [001]-grown (In,Ga)As/(Al,Ga)As quantum wells

M. Livingstone, I. Galbraith, B. S. Wherrett

Research output: Contribution to journalArticle

Abstract

The nonlinear absorption and refractive index spectra for [111]- and [001]-grown (In,Ga)As/(Al,Ga)As single strained-layer quantum-well structures are calculated, for different photogenerated carrier densities. Screening of the strain-induced electric field by photocarriers that have escaped from the [111]-grown quantum well is shown to produce a similar magnitude of nonlinear refractive cross section to that of the conventional [001]-grown quantum well. © 1994 American Institute of Physics.

Original languageEnglish
Pages (from-to)2771-2773
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number22
DOIs
Publication statusPublished - 1994

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nonlinearity
quantum wells
screening
refractivity
physics
electric fields
cross sections

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@article{153ab82b9de242a496f1ebbcc2d750f3,
title = "Comparison of optical nonlinearities in piezoelectric strained [111]- and [001]-grown (In,Ga)As/(Al,Ga)As quantum wells",
abstract = "The nonlinear absorption and refractive index spectra for [111]- and [001]-grown (In,Ga)As/(Al,Ga)As single strained-layer quantum-well structures are calculated, for different photogenerated carrier densities. Screening of the strain-induced electric field by photocarriers that have escaped from the [111]-grown quantum well is shown to produce a similar magnitude of nonlinear refractive cross section to that of the conventional [001]-grown quantum well. {\circledC} 1994 American Institute of Physics.",
author = "M. Livingstone and I. Galbraith and Wherrett, {B. S.}",
year = "1994",
doi = "10.1063/1.112558",
language = "English",
volume = "65",
pages = "2771--2773",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

Comparison of optical nonlinearities in piezoelectric strained [111]- and [001]-grown (In,Ga)As/(Al,Ga)As quantum wells. / Livingstone, M.; Galbraith, I.; Wherrett, B. S.

In: Applied Physics Letters, Vol. 65, No. 22, 1994, p. 2771-2773.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Comparison of optical nonlinearities in piezoelectric strained [111]- and [001]-grown (In,Ga)As/(Al,Ga)As quantum wells

AU - Livingstone, M.

AU - Galbraith, I.

AU - Wherrett, B. S.

PY - 1994

Y1 - 1994

N2 - The nonlinear absorption and refractive index spectra for [111]- and [001]-grown (In,Ga)As/(Al,Ga)As single strained-layer quantum-well structures are calculated, for different photogenerated carrier densities. Screening of the strain-induced electric field by photocarriers that have escaped from the [111]-grown quantum well is shown to produce a similar magnitude of nonlinear refractive cross section to that of the conventional [001]-grown quantum well. © 1994 American Institute of Physics.

AB - The nonlinear absorption and refractive index spectra for [111]- and [001]-grown (In,Ga)As/(Al,Ga)As single strained-layer quantum-well structures are calculated, for different photogenerated carrier densities. Screening of the strain-induced electric field by photocarriers that have escaped from the [111]-grown quantum well is shown to produce a similar magnitude of nonlinear refractive cross section to that of the conventional [001]-grown quantum well. © 1994 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=0005799120&partnerID=8YFLogxK

U2 - 10.1063/1.112558

DO - 10.1063/1.112558

M3 - Article

VL - 65

SP - 2771

EP - 2773

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -