Abstract
The nonlinear absorption and refractive index spectra for [111]- and [001]-grown (In,Ga)As/(Al,Ga)As single strained-layer quantum-well structures are calculated, for different photogenerated carrier densities. Screening of the strain-induced electric field by photocarriers that have escaped from the [111]-grown quantum well is shown to produce a similar magnitude of nonlinear refractive cross section to that of the conventional [001]-grown quantum well. © 1994 American Institute of Physics.
Original language | English |
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Pages (from-to) | 2771-2773 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 22 |
DOIs | |
Publication status | Published - 1994 |