Comparison of optical nonlinearities in piezoelectric strained [111]- and [001]-grown (In,Ga)As/(Al,Ga)As quantum wells

M. Livingstone; I. Galbraith; B. S. Wherrett

doi:10.1063/1.112558

Comparison of optical nonlinearities in piezoelectric strained [111]- and [001]-grown (In,Ga)As/(Al,Ga)As quantum wells

M. Livingstone, I. Galbraith, B. S. Wherrett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

The nonlinear absorption and refractive index spectra for [111]- and [001]-grown (In,Ga)As/(Al,Ga)As single strained-layer quantum-well structures are calculated, for different photogenerated carrier densities. Screening of the strain-induced electric field by photocarriers that have escaped from the [111]-grown quantum well is shown to produce a similar magnitude of nonlinear refractive cross section to that of the conventional [001]-grown quantum well. © 1994 American Institute of Physics.

Original language	English
Pages (from-to)	2771-2773
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	22
DOIs	https://doi.org/10.1063/1.112558
Publication status	Published - 1994

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title = "Comparison of optical nonlinearities in piezoelectric strained [111]- and [001]-grown (In,Ga)As/(Al,Ga)As quantum wells",

abstract = "The nonlinear absorption and refractive index spectra for [111]- and [001]-grown (In,Ga)As/(Al,Ga)As single strained-layer quantum-well structures are calculated, for different photogenerated carrier densities. Screening of the strain-induced electric field by photocarriers that have escaped from the [111]-grown quantum well is shown to produce a similar magnitude of nonlinear refractive cross section to that of the conventional [001]-grown quantum well. {\textcopyright} 1994 American Institute of Physics.",

author = "M. Livingstone and I. Galbraith and Wherrett, {B. S.}",

year = "1994",

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PY - 1994

Y1 - 1994

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AB - The nonlinear absorption and refractive index spectra for [111]- and [001]-grown (In,Ga)As/(Al,Ga)As single strained-layer quantum-well structures are calculated, for different photogenerated carrier densities. Screening of the strain-induced electric field by photocarriers that have escaped from the [111]-grown quantum well is shown to produce a similar magnitude of nonlinear refractive cross section to that of the conventional [001]-grown quantum well. © 1994 American Institute of Physics.

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ER -

Comparison of optical nonlinearities in piezoelectric strained [111]- and [001]-grown (In,Ga)As/(Al,Ga)As quantum wells

Abstract

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