Abstract
The nonlinear absorption and refractive index spectra for [111]- and [001]-grown (In,Ga)As/(Al,Ga)As single strained-layer quantum-well structures are calculated, for different photogenerated carrier densities. Screening of the strain-induced electric field by photocarriers that have escaped from the [111]-grown quantum well is shown to produce a similar magnitude of nonlinear refractive cross section to that of the conventional [001]-grown quantum well. © 1994 American Institute of Physics.
| Original language | English |
|---|---|
| Pages (from-to) | 2771-2773 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 65 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 1994 |
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Livingstone, M., Galbraith, I., & Wherrett, B. S. (1994). Comparison of optical nonlinearities in piezoelectric strained [111]- and [001]-grown (In,Ga)As/(Al,Ga)As quantum wells. Applied Physics Letters, 65(22), 2771-2773. https://doi.org/10.1063/1.112558