Comparison of 5 kV 4H-SiC N-channel and P-channel IGBTs

Jue Wang; B. W. Williams; Shankar E. Madathil; M. M. Desouza

Comparison of 5 kV 4H-SiC N-channel and P-channel IGBTs

Jue Wang, B. W. Williams, Shankar E. Madathil, M. M. Desouza

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, the performance of 5 kV SiC P-channel and N-channel IGBTs is investigated and compared. Unlike their Si counterparts, the 4H-SiC N-channel TIGBT is not suitable for applications at 300 K-400 K and the P-channel IGBT is a better choice because of the relatively larger ionization gradients of acceptors than donors in SiC, although elevating the operating temperature improves the N-channel IGBT performance significantly.

Original language	English
Pages (from-to)	II/-
Journal	Materials Science Forum
Volume	338
Publication status	Published - 2000
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 10 Oct 1999 → 15 Oct 1999

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title = "Comparison of 5 kV 4H-SiC N-channel and P-channel IGBTs",

abstract = "In this paper, the performance of 5 kV SiC P-channel and N-channel IGBTs is investigated and compared. Unlike their Si counterparts, the 4H-SiC N-channel TIGBT is not suitable for applications at 300 K-400 K and the P-channel IGBT is a better choice because of the relatively larger ionization gradients of acceptors than donors in SiC, although elevating the operating temperature improves the N-channel IGBT performance significantly.",

author = "Jue Wang and Williams, {B. W.} and Madathil, {Shankar E.} and Desouza, {M. M.}",

year = "2000",

language = "English",

volume = "338",

pages = "II/--",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

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TY - JOUR

T1 - Comparison of 5 kV 4H-SiC N-channel and P-channel IGBTs

AU - Wang, Jue

AU - Williams, B. W.

AU - Madathil, Shankar E.

AU - Desouza, M. M.

PY - 2000

Y1 - 2000

N2 - In this paper, the performance of 5 kV SiC P-channel and N-channel IGBTs is investigated and compared. Unlike their Si counterparts, the 4H-SiC N-channel TIGBT is not suitable for applications at 300 K-400 K and the P-channel IGBT is a better choice because of the relatively larger ionization gradients of acceptors than donors in SiC, although elevating the operating temperature improves the N-channel IGBT performance significantly.

AB - In this paper, the performance of 5 kV SiC P-channel and N-channel IGBTs is investigated and compared. Unlike their Si counterparts, the 4H-SiC N-channel TIGBT is not suitable for applications at 300 K-400 K and the P-channel IGBT is a better choice because of the relatively larger ionization gradients of acceptors than donors in SiC, although elevating the operating temperature improves the N-channel IGBT performance significantly.

UR - http://www.scopus.com/inward/record.url?scp=0343878034&partnerID=8YFLogxK

M3 - Article

VL - 338

SP - II/-

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Comparison of 5 kV 4H-SiC N-channel and P-channel IGBTs

Abstract

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