Comparison of 5 kV 4H-SiC N-channel and P-channel IGBTs

Jue Wang, B. W. Williams, Shankar E. Madathil, M. M. Desouza

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, the performance of 5 kV SiC P-channel and N-channel IGBTs is investigated and compared. Unlike their Si counterparts, the 4H-SiC N-channel TIGBT is not suitable for applications at 300 K-400 K and the P-channel IGBT is a better choice because of the relatively larger ionization gradients of acceptors than donors in SiC, although elevating the operating temperature improves the N-channel IGBT performance significantly.

Original languageEnglish
Pages (from-to)II/-
JournalMaterials Science Forum
Volume338
Publication statusPublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 10 Oct 199915 Oct 1999

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