Abstract
In this paper, the performance of 5 kV SiC P-channel and N-channel IGBTs is investigated and compared. Unlike their Si counterparts, the 4H-SiC N-channel TIGBT is not suitable for applications at 300 K-400 K and the P-channel IGBT is a better choice because of the relatively larger ionization gradients of acceptors than donors in SiC, although elevating the operating temperature improves the N-channel IGBT performance significantly.
| Original language | English |
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| Pages (from-to) | II/- |
| Journal | Materials Science Forum |
| Volume | 338 |
| Publication status | Published - 2000 |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 10 Oct 1999 → 15 Oct 1999 |