In this paper, the performance of 5 kV SiC P-channel and N-channel IGBTs is investigated and compared. Unlike their Si counterparts, the 4H-SiC N-channel TIGBT is not suitable for applications at 300 K-400 K and the P-channel IGBT is a better choice because of the relatively larger ionization gradients of acceptors than donors in SiC, although elevating the operating temperature improves the N-channel IGBT performance significantly.
|Journal||Materials Science Forum|
|Publication status||Published - 2000|
|Event||ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA|
Duration: 10 Oct 1999 → 15 Oct 1999