Comment on “Diffusion of n-type dopants in germanium” [Appl. Phys. Rev. 1, 011301 (2014)]

N. E B Cowern, S. Simdyankin, J. P. Goss, E. Napolitani, D. De Salvador, E. Bruno, S. Mirabella, C. Ahn, N. S. Bennett

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Abstract

The authors of the above paper call into question recent evidence on the properties of self-interstitials, I, in Ge [Cowern et al., Phys. Rev. Lett. 110, 155501 (2013)]. We show that this judgment stems from invalid model assumptions during analysis of data on B marker-layer diffusion during proton irradiation, and that a corrected analysis fully supports the reported evidence. As previously stated, I-mediated self-diffusion in Ge exhibits two distinct regimes of temperature, T: high-T, dominated by amorphous-like mono-interstitial clusters - i-morphs - with self-diffusion entropy30k, and low-T, where transport is dominated by simple self-interstitials. In a transitional range centered on 475°C both mechanisms contribute. The experimental I migration energy of 1.84±0.26 eV reported by the Münster group based on measurements of self-diffusion during irradiation at 550°C<T<680°C further establishes our proposed i-morph mechanism.

Original languageEnglish
Article number036101
JournalApplied Physics Reviews
Volume2
Issue number3
DOIs
Publication statusPublished - Sep 2015

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Cowern, N. E. B., Simdyankin, S., Goss, J. P., Napolitani, E., De Salvador, D., Bruno, E., Mirabella, S., Ahn, C., & Bennett, N. S. (2015). Comment on “Diffusion of n-type dopants in germanium” [Appl. Phys. Rev. 1, 011301 (2014)]. Applied Physics Reviews, 2(3), [036101]. https://doi.org/10.1063/1.4929762