Co3M2S2 (M = Sn, In) shandites as tellurium-free thermoelectrics

Jack Corps; Maria de la Paz Vaqueiro-Rodriguez; Anthony Vivian Powell

doi:10.1039/C3TA11264K

Co3M2S2 (M = Sn, In) shandites as tellurium-free thermoelectrics

Jack Corps^*, Maria de la Paz Vaqueiro-Rodriguez, Anthony Vivian Powell

^*Corresponding author for this work

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Chemical substitution in Co3Sn2-xInxS2 (0 = x = 2) enables tuning of the Fermi level within narrow bands of Co d-states. This results in a compositionally induced double metal–semiconductor–metal transition and manipulation of the thermoelectric power factor. The maximum power factor (14 µW cm-1 K-2) is found for x = 0.85, which corresponds to ZT ˜ 0.2 at 300 K.

Original language	English
Pages (from-to)	6553-6557
Number of pages	5
Journal	Journal of Materials Chemistry A
Volume	1
Issue number	22
Early online date	19 Apr 2013
DOIs	https://doi.org/10.1039/C3TA11264K
Publication status	Published - 14 Jun 2013

Keywords

HALF-ANTIPEROVSKITES
MERIT
PERFORMANCE
FIGURE
ENHANCEMENT
TEMPERATURE
EFFICIENCY
BICUSEO
PBTE
PBS

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10.1039/C3TA11264K

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@article{8ebad813338a4d459b93345d758ea761,

title = "Co3M2S2 (M = Sn, In) shandites as tellurium-free thermoelectrics",

abstract = "Chemical substitution in Co3Sn2-xInxS2 (0 = x = 2) enables tuning of the Fermi level within narrow bands of Co d-states. This results in a compositionally induced double metal–semiconductor–metal transition and manipulation of the thermoelectric power factor. The maximum power factor (14 µW cm-1 K-2) is found for x = 0.85, which corresponds to ZT ˜ 0.2 at 300 K. ",

keywords = "HALF-ANTIPEROVSKITES, MERIT, PERFORMANCE, FIGURE, ENHANCEMENT, TEMPERATURE, EFFICIENCY, BICUSEO, PBTE, PBS",

author = "Jack Corps and Vaqueiro-Rodriguez, {Maria de la Paz} and Powell, {Anthony Vivian}",

year = "2013",

month = jun,

day = "14",

doi = "10.1039/C3TA11264K",

language = "English",

volume = "1",

pages = "6553--6557",

journal = "Journal of Materials Chemistry A",

issn = "2050-7488",

publisher = "Royal Society of Chemistry",

number = "22",

}

TY - JOUR

T1 - Co3M2S2 (M = Sn, In) shandites as tellurium-free thermoelectrics

AU - Corps, Jack

AU - Vaqueiro-Rodriguez, Maria de la Paz

AU - Powell, Anthony Vivian

PY - 2013/6/14

Y1 - 2013/6/14

N2 - Chemical substitution in Co3Sn2-xInxS2 (0 = x = 2) enables tuning of the Fermi level within narrow bands of Co d-states. This results in a compositionally induced double metal–semiconductor–metal transition and manipulation of the thermoelectric power factor. The maximum power factor (14 µW cm-1 K-2) is found for x = 0.85, which corresponds to ZT ˜ 0.2 at 300 K.

AB - Chemical substitution in Co3Sn2-xInxS2 (0 = x = 2) enables tuning of the Fermi level within narrow bands of Co d-states. This results in a compositionally induced double metal–semiconductor–metal transition and manipulation of the thermoelectric power factor. The maximum power factor (14 µW cm-1 K-2) is found for x = 0.85, which corresponds to ZT ˜ 0.2 at 300 K.

KW - HALF-ANTIPEROVSKITES

KW - MERIT

KW - PERFORMANCE

KW - FIGURE

KW - ENHANCEMENT

KW - TEMPERATURE

KW - EFFICIENCY

KW - BICUSEO

KW - PBTE

KW - PBS

U2 - 10.1039/C3TA11264K

DO - 10.1039/C3TA11264K

M3 - Article

SN - 2050-7488

VL - 1

SP - 6553

EP - 6557

JO - Journal of Materials Chemistry A

JF - Journal of Materials Chemistry A

IS - 22

ER -

Co3M2S2 (M = Sn, In) shandites as tellurium-free thermoelectrics

Abstract

Keywords

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