Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages

Jue Wang; B. W. Williams; Shankar E. Madathil; M. M. Desouza

Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages

Jue Wang, B. W. Williams, Shankar E. Madathil, M. M. Desouza

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, a closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages is presented and verified. It is shown that to obtain a minimum base region specific on-state resistance for 6H-SiC unipolar power devices, a value of ß?0.6 (ß = V_RT/V_PT) is required. The results can also be used to design soft recovery PiN diodes.

Original language	English
Pages (from-to)	II/-
Journal	Materials Science Forum
Volume	338
Publication status	Published - 2000
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 10 Oct 1999 → 15 Oct 1999

Cite this

@article{ea6b4fe4c4c842b799b7aa679266a919,

title = "Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages",

abstract = "In this paper, a closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages is presented and verified. It is shown that to obtain a minimum base region specific on-state resistance for 6H-SiC unipolar power devices, a value of {\ss}?0.6 ({\ss} = VRT/VPT) is required. The results can also be used to design soft recovery PiN diodes.",

author = "Jue Wang and Williams, \{B. W.\} and Madathil, \{Shankar E.\} and Desouza, \{M. M.\}",

year = "2000",

language = "English",

volume = "338",

pages = "II/--",

journal = "Materials Science Forum",

issn = "1662-9752",

publisher = "Trans Tech Publications Ltd",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

}

TY - JOUR

T1 - Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages

AU - Wang, Jue

AU - Williams, B. W.

AU - Madathil, Shankar E.

AU - Desouza, M. M.

PY - 2000

Y1 - 2000

N2 - In this paper, a closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages is presented and verified. It is shown that to obtain a minimum base region specific on-state resistance for 6H-SiC unipolar power devices, a value of ß?0.6 (ß = VRT/VPT) is required. The results can also be used to design soft recovery PiN diodes.

AB - In this paper, a closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages is presented and verified. It is shown that to obtain a minimum base region specific on-state resistance for 6H-SiC unipolar power devices, a value of ß?0.6 (ß = VRT/VPT) is required. The results can also be used to design soft recovery PiN diodes.

UR - https://www.scopus.com/pages/publications/0343878032

M3 - Article

SN - 1662-9752

VL - 338

SP - II/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages

Abstract

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