Abstract
In this paper, a closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages is presented and verified. It is shown that to obtain a minimum base region specific on-state resistance for 6H-SiC unipolar power devices, a value of ß?0.6 (ß = VRT/VPT) is required. The results can also be used to design soft recovery PiN diodes.
| Original language | English |
|---|---|
| Pages (from-to) | II/- |
| Journal | Materials Science Forum |
| Volume | 338 |
| Publication status | Published - 2000 |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 10 Oct 1999 → 15 Oct 1999 |
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Wang, J., Williams, B. W., Madathil, S. E., & Desouza, M. M. (2000). Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages. Materials Science Forum, 338, II/-.