In this paper, a closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages is presented and verified. It is shown that to obtain a minimum base region specific on-state resistance for 6H-SiC unipolar power devices, a value of ß?0.6 (ß = VRT/VPT) is required. The results can also be used to design soft recovery PiN diodes.
|Journal||Materials Science Forum|
|Publication status||Published - 2000|
|Event||ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA|
Duration: 10 Oct 1999 → 15 Oct 1999