Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages

Jue Wang, B. W. Williams, Shankar E. Madathil, M. M. Desouza

Research output: Contribution to journalArticle

Abstract

In this paper, a closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages is presented and verified. It is shown that to obtain a minimum base region specific on-state resistance for 6H-SiC unipolar power devices, a value of ß?0.6 (ß = VRT/VPT) is required. The results can also be used to design soft recovery PiN diodes.

Original languageEnglish
Pages (from-to)II/-
JournalMaterials Science Forum
Volume338
Publication statusPublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 10 Oct 199915 Oct 1999

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  • Cite this

    Wang, J., Williams, B. W., Madathil, S. E., & Desouza, M. M. (2000). Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages. Materials Science Forum, 338, II/-.