Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages

Jue Wang, B. W. Williams, Shankar E. Madathil, M. M. Desouza

Research output: Contribution to journalArticle

Abstract

In this paper, a closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages is presented and verified. It is shown that to obtain a minimum base region specific on-state resistance for 6H-SiC unipolar power devices, a value of ß?0.6 (ß = VRT/VPT) is required. The results can also be used to design soft recovery PiN diodes.

Original languageEnglish
Pages (from-to)II/-
JournalMaterials Science Forum
Volume338
Publication statusPublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 10 Oct 199915 Oct 1999

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Electric breakdown
Diodes
Recovery

Cite this

Wang, J., Williams, B. W., Madathil, S. E., & Desouza, M. M. (2000). Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages. Materials Science Forum, 338, II/-.
Wang, Jue ; Williams, B. W. ; Madathil, Shankar E. ; Desouza, M. M. / Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages. In: Materials Science Forum. 2000 ; Vol. 338. pp. II/-.
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Wang, J, Williams, BW, Madathil, SE & Desouza, MM 2000, 'Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages', Materials Science Forum, vol. 338, pp. II/-.

Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages. / Wang, Jue; Williams, B. W.; Madathil, Shankar E.; Desouza, M. M.

In: Materials Science Forum, Vol. 338, 2000, p. II/-.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages

AU - Wang, Jue

AU - Williams, B. W.

AU - Madathil, Shankar E.

AU - Desouza, M. M.

PY - 2000

Y1 - 2000

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AB - In this paper, a closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages is presented and verified. It is shown that to obtain a minimum base region specific on-state resistance for 6H-SiC unipolar power devices, a value of ß?0.6 (ß = VRT/VPT) is required. The results can also be used to design soft recovery PiN diodes.

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JF - Materials Science Forum

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