Chemical-bath deposition of band-gap-tailored CdxPb1−xS films

Hari M Upadhyaya; S Chandra

doi:10.1007/BF00356825

Chemical-bath deposition of band-gap-tailored Cd_xPb_1−xS films

Hari M Upadhyaya, S Chandra

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Abstract

An attempt was made to modify the band gap of CdS (approximately 2.4 eV) by preparing a mixed lattice with a low-band-gap material, PbS (0.3 eV), giving a new set of materials, CdxPb1-xS. Band gaps as low as approximately 1.9 eV were achieved with increasing x. The preparation of CdxPb1-xS was carried out by chemical-bath deposition. Structural characterization studies using X-ray diffraction (XRD), energy dispersion analysis by X-rays (EDAX), and optical microscopy were performed. The optical-absorption studies used to find the band gap are also described.

Original language	English
Pages (from-to)	2734-2740
Number of pages	7
Journal	Journal of Materials Science
Volume	29
Issue number	10
DOIs	https://doi.org/10.1007/BF00356825
Publication status	Published - 15 May 1994

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abstract = "An attempt was made to modify the band gap of CdS (approximately 2.4 eV) by preparing a mixed lattice with a low-band-gap material, PbS (0.3 eV), giving a new set of materials, CdxPb1-xS. Band gaps as low as approximately 1.9 eV were achieved with increasing x. The preparation of CdxPb1-xS was carried out by chemical-bath deposition. Structural characterization studies using X-ray diffraction (XRD), energy dispersion analysis by X-rays (EDAX), and optical microscopy were performed. The optical-absorption studies used to find the band gap are also described.",

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N2 - An attempt was made to modify the band gap of CdS (approximately 2.4 eV) by preparing a mixed lattice with a low-band-gap material, PbS (0.3 eV), giving a new set of materials, CdxPb1-xS. Band gaps as low as approximately 1.9 eV were achieved with increasing x. The preparation of CdxPb1-xS was carried out by chemical-bath deposition. Structural characterization studies using X-ray diffraction (XRD), energy dispersion analysis by X-rays (EDAX), and optical microscopy were performed. The optical-absorption studies used to find the band gap are also described.

AB - An attempt was made to modify the band gap of CdS (approximately 2.4 eV) by preparing a mixed lattice with a low-band-gap material, PbS (0.3 eV), giving a new set of materials, CdxPb1-xS. Band gaps as low as approximately 1.9 eV were achieved with increasing x. The preparation of CdxPb1-xS was carried out by chemical-bath deposition. Structural characterization studies using X-ray diffraction (XRD), energy dispersion analysis by X-rays (EDAX), and optical microscopy were performed. The optical-absorption studies used to find the band gap are also described.

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JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 10

ER -

Chemical-bath deposition of band-gap-tailored CdxPb1−xS films

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Chemical-bath deposition of band-gap-tailored Cd_xPb_1−xS films