Chemical-bath deposition of band-gap-tailored CdxPb1−xS films

Hari M Upadhyaya, S Chandra

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


An attempt was made to modify the band gap of CdS (approximately 2.4 eV) by preparing a mixed lattice with a low-band-gap material, PbS (0.3 eV), giving a new set of materials, CdxPb1-xS. Band gaps as low as approximately 1.9 eV were achieved with increasing x. The preparation of CdxPb1-xS was carried out by chemical-bath deposition. Structural characterization studies using X-ray diffraction (XRD), energy dispersion analysis by X-rays (EDAX), and optical microscopy were performed. The optical-absorption studies used to find the band gap are also described.

Original languageEnglish
Pages (from-to)2734-2740
Number of pages7
JournalJournal of Materials Science
Issue number10
Publication statusPublished - 15 May 1994


Dive into the research topics of 'Chemical-bath deposition of band-gap-tailored CdxPb1−xS films'. Together they form a unique fingerprint.

Cite this