Charged excitons in self-assembled quantum dots

R. J. Warburton; B. Urbaszek; E. J. McGhee; C. Schulhauser; A. Högele; K. Karrai; A. O. Govorov; J. M. Garcia; B. D. Gerardot; P. M. Petroff

Charged excitons in self-assembled quantum dots

R. J. Warburton, B. Urbaszek, E. J. McGhee, C. Schulhauser, A. Högele, K. Karrai, A. O. Govorov, J. M. Garcia, B. D. Gerardot, P. M. Petroff

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have succeeded in generating highly charged excitons in InAs self-assembled quantum dots by embedding the dots in a field-effect heterostructure. We discover an excitonic Coulomb blockage: over large regions of gate voltage, the exciton charge remains constant. We present here a summary of the emission properties of the charged excitons.

Original language	English
Pages (from-to)	95-105
Number of pages	11
Journal	MRS Online Proceedings Library
Volume	737
Publication status	Published - 2003
Event	Quantum Confined Semiconductor Nanostructures - Boston MA, United States Duration: 2 Dec 2002 → 5 Dec 2002

Cite this

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title = "Charged excitons in self-assembled quantum dots",

abstract = "We have succeeded in generating highly charged excitons in InAs self-assembled quantum dots by embedding the dots in a field-effect heterostructure. We discover an excitonic Coulomb blockage: over large regions of gate voltage, the exciton charge remains constant. We present here a summary of the emission properties of the charged excitons.",

author = "Warburton, {R. J.} and B. Urbaszek and McGhee, {E. J.} and C. Schulhauser and A. H{\"o}gele and K. Karrai and Govorov, {A. O.} and Garcia, {J. M.} and Gerardot, {B. D.} and Petroff, {P. M.}",

year = "2003",

language = "English",

volume = "737",

pages = "95--105",

journal = "MRS Online Proceedings Library",

issn = "1946-4274",

publisher = "Materials Research Society",

note = "Quantum Confined Semiconductor Nanostructures ; Conference date: 02-12-2002 Through 05-12-2002",

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T1 - Charged excitons in self-assembled quantum dots

AU - Warburton, R. J.

AU - Urbaszek, B.

AU - McGhee, E. J.

AU - Schulhauser, C.

AU - Högele, A.

AU - Karrai, K.

AU - Govorov, A. O.

AU - Garcia, J. M.

AU - Gerardot, B. D.

AU - Petroff, P. M.

PY - 2003

Y1 - 2003

N2 - We have succeeded in generating highly charged excitons in InAs self-assembled quantum dots by embedding the dots in a field-effect heterostructure. We discover an excitonic Coulomb blockage: over large regions of gate voltage, the exciton charge remains constant. We present here a summary of the emission properties of the charged excitons.

AB - We have succeeded in generating highly charged excitons in InAs self-assembled quantum dots by embedding the dots in a field-effect heterostructure. We discover an excitonic Coulomb blockage: over large regions of gate voltage, the exciton charge remains constant. We present here a summary of the emission properties of the charged excitons.

UR - http://www.scopus.com/inward/record.url?scp=0038826142&partnerID=8YFLogxK

M3 - Article

SN - 1946-4274

VL - 737

SP - 95

EP - 105

JO - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

T2 - Quantum Confined Semiconductor Nanostructures

Y2 - 2 December 2002 through 5 December 2002

ER -

Charged excitons in self-assembled quantum dots

Abstract

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