Charged excitons in self-assembled quantum dots

R. J. Warburton, B. Urbaszek, E. J. McGhee, C. Schulhauser, A. Högele, K. Karrai, A. O. Govorov, J. M. Garcia, B. D. Gerardot, P. M. Petroff

Research output: Contribution to journalArticle

Abstract

We have succeeded in generating highly charged excitons in InAs self-assembled quantum dots by embedding the dots in a field-effect heterostructure. We discover an excitonic Coulomb blockage: over large regions of gate voltage, the exciton charge remains constant. We present here a summary of the emission properties of the charged excitons.

Original languageEnglish
Pages (from-to)95-105
Number of pages11
JournalMRS Online Proceedings Library
Volume737
Publication statusPublished - 2003
EventQuantum Confined Semiconductor Nanostructures - Boston MA, United States
Duration: 2 Dec 20025 Dec 2002

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    Warburton, R. J., Urbaszek, B., McGhee, E. J., Schulhauser, C., Högele, A., Karrai, K., Govorov, A. O., Garcia, J. M., Gerardot, B. D., & Petroff, P. M. (2003). Charged excitons in self-assembled quantum dots. MRS Online Proceedings Library, 737, 95-105.