Charge transport in graphene with resonant scatterers

M. Titov; P. M. Ostrovsky; I. V. Gornyi; A. Schuessler; A. D. Mirlin

doi:10.1103/PhysRevLett.104.076802

Charge transport in graphene with resonant scatterers

M. Titov, P. M. Ostrovsky, I. V. Gornyi, A. Schuessler, A. D. Mirlin

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

63 Citations (Scopus)

Abstract

The full counting statistics for the charge transport through an undoped graphene sheet in the presence of strong potential impurities is studied. Treating the scattering off the impurity in the s-wave approximation, we calculate the impurity correction to the cumulant generating function. This correction is universal provided the impurity strength is tuned to a resonant value. In particular, the conductance of the sample acquires a correction of 16e2/(p2h) per resonant impurity. © 2010 The American Physical Society.

Original language	English
Article number	076802
Journal	Physical Review Letters
Volume	104
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevLett.104.076802
Publication status	Published - 18 Feb 2010

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10.1103/PhysRevLett.104.076802

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title = "Charge transport in graphene with resonant scatterers",

abstract = "The full counting statistics for the charge transport through an undoped graphene sheet in the presence of strong potential impurities is studied. Treating the scattering off the impurity in the s-wave approximation, we calculate the impurity correction to the cumulant generating function. This correction is universal provided the impurity strength is tuned to a resonant value. In particular, the conductance of the sample acquires a correction of 16e2/(p2h) per resonant impurity. {\textcopyright} 2010 The American Physical Society.",

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AU - Schuessler, A.

AU - Mirlin, A. D.

PY - 2010/2/18

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N2 - The full counting statistics for the charge transport through an undoped graphene sheet in the presence of strong potential impurities is studied. Treating the scattering off the impurity in the s-wave approximation, we calculate the impurity correction to the cumulant generating function. This correction is universal provided the impurity strength is tuned to a resonant value. In particular, the conductance of the sample acquires a correction of 16e2/(p2h) per resonant impurity. © 2010 The American Physical Society.

AB - The full counting statistics for the charge transport through an undoped graphene sheet in the presence of strong potential impurities is studied. Treating the scattering off the impurity in the s-wave approximation, we calculate the impurity correction to the cumulant generating function. This correction is universal provided the impurity strength is tuned to a resonant value. In particular, the conductance of the sample acquires a correction of 16e2/(p2h) per resonant impurity. © 2010 The American Physical Society.

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DO - 10.1103/PhysRevLett.104.076802

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SN - 0031-9007

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JO - Physical Review Letters

JF - Physical Review Letters

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Charge transport in graphene with resonant scatterers

Abstract

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