Characterization and Development of Materials for an Integrated High-Temperature Sensor Using Resistive Test Structures

Marc Phillipe Yves Desmulliez, J G Terry, Gordon D. Murray, Gerard Cummins, Yu Fu, A J Walton, S Smith

Research output: Contribution to conferencePaper

Abstract

This paper reports the application of test structures
to the evaluation of tantalum nitride (Ta-N) as a material for
integration with high temperature electronics. The test structure
fabrication involves the reactive sputtering of Ta-N and its
consequent annealing in a vacuum to reach the target
specifications of low temperature coefficient of resistance (TCR).
A test wafer has been designed to both evaluate the temperature
performance of thin films and to study the possibility of
integrating different metal films into a single sensing device. The
Ta-N resistors resulting from this work have a TCR of
–150 ppm/°C, which remains stable after 6 hours of annealing at
600 °C.
Original languageEnglish
Pages188-193
Number of pages6
Publication statusPublished - 2014

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temperature sensors
tantalum nitrides
annealing
coefficients
metal films
resistors
sputtering
wafers
vacuum
evaluation
thin films
electronics
temperature

Cite this

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title = "Characterization and Development of Materials for an Integrated High-Temperature Sensor Using Resistive Test Structures",
abstract = "This paper reports the application of test structures to the evaluation of tantalum nitride (Ta-N) as a material for integration with high temperature electronics. The test structure fabrication involves the reactive sputtering of Ta-N and its consequent annealing in a vacuum to reach the target specifications of low temperature coefficient of resistance (TCR). A test wafer has been designed to both evaluate the temperature performance of thin films and to study the possibility of integrating different metal films into a single sensing device. The Ta-N resistors resulting from this work have a TCR of –150 ppm/°C, which remains stable after 6 hours of annealing at 600 °C.",
author = "Desmulliez, {Marc Phillipe Yves} and Terry, {J G} and Murray, {Gordon D.} and Gerard Cummins and Yu Fu and Walton, {A J} and S Smith",
year = "2014",
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pages = "188--193",

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Characterization and Development of Materials for an Integrated High-Temperature Sensor Using Resistive Test Structures. / Desmulliez, Marc Phillipe Yves; Terry, J G; Murray, Gordon D.; Cummins, Gerard; Fu, Yu; Walton, A J; Smith, S.

2014. 188-193.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Characterization and Development of Materials for an Integrated High-Temperature Sensor Using Resistive Test Structures

AU - Desmulliez, Marc Phillipe Yves

AU - Terry, J G

AU - Murray, Gordon D.

AU - Cummins, Gerard

AU - Fu, Yu

AU - Walton, A J

AU - Smith, S

PY - 2014

Y1 - 2014

N2 - This paper reports the application of test structures to the evaluation of tantalum nitride (Ta-N) as a material for integration with high temperature electronics. The test structure fabrication involves the reactive sputtering of Ta-N and its consequent annealing in a vacuum to reach the target specifications of low temperature coefficient of resistance (TCR). A test wafer has been designed to both evaluate the temperature performance of thin films and to study the possibility of integrating different metal films into a single sensing device. The Ta-N resistors resulting from this work have a TCR of –150 ppm/°C, which remains stable after 6 hours of annealing at 600 °C.

AB - This paper reports the application of test structures to the evaluation of tantalum nitride (Ta-N) as a material for integration with high temperature electronics. The test structure fabrication involves the reactive sputtering of Ta-N and its consequent annealing in a vacuum to reach the target specifications of low temperature coefficient of resistance (TCR). A test wafer has been designed to both evaluate the temperature performance of thin films and to study the possibility of integrating different metal films into a single sensing device. The Ta-N resistors resulting from this work have a TCR of –150 ppm/°C, which remains stable after 6 hours of annealing at 600 °C.

M3 - Paper

SP - 188

EP - 193

ER -