Abstract
This paper reports the application of test structures
to the evaluation of tantalum nitride (Ta-N) as a material for
integration with high temperature electronics. The test structure
fabrication involves the reactive sputtering of Ta-N and its
consequent annealing in a vacuum to reach the target
specifications of low temperature coefficient of resistance (TCR).
A test wafer has been designed to both evaluate the temperature
performance of thin films and to study the possibility of
integrating different metal films into a single sensing device. The
Ta-N resistors resulting from this work have a TCR of
–150 ppm/°C, which remains stable after 6 hours of annealing at
600 °C.
to the evaluation of tantalum nitride (Ta-N) as a material for
integration with high temperature electronics. The test structure
fabrication involves the reactive sputtering of Ta-N and its
consequent annealing in a vacuum to reach the target
specifications of low temperature coefficient of resistance (TCR).
A test wafer has been designed to both evaluate the temperature
performance of thin films and to study the possibility of
integrating different metal films into a single sensing device. The
Ta-N resistors resulting from this work have a TCR of
–150 ppm/°C, which remains stable after 6 hours of annealing at
600 °C.
| Original language | English |
|---|---|
| Pages | 188-193 |
| Number of pages | 6 |
| Publication status | Published - 2014 |