Characterization and Development of Materials for an Integrated High-Temperature Sensor Using Resistive Test Structures

Marc Phillipe Yves Desmulliez, J G Terry, Gordon D. Murray, Gerard Cummins, Yu Fu, A J Walton, S Smith

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

This paper reports the application of test structures
to the evaluation of tantalum nitride (Ta-N) as a material for
integration with high temperature electronics. The test structure
fabrication involves the reactive sputtering of Ta-N and its
consequent annealing in a vacuum to reach the target
specifications of low temperature coefficient of resistance (TCR).
A test wafer has been designed to both evaluate the temperature
performance of thin films and to study the possibility of
integrating different metal films into a single sensing device. The
Ta-N resistors resulting from this work have a TCR of
–150 ppm/°C, which remains stable after 6 hours of annealing at
600 °C.
Original languageEnglish
Pages188-193
Number of pages6
Publication statusPublished - 2014

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  • Cite this

    Desmulliez, M. P. Y., Terry, J. G., Murray, G. D., Cummins, G., Fu, Y., Walton, A. J., & Smith, S. (2014). Characterization and Development of Materials for an Integrated High-Temperature Sensor Using Resistive Test Structures. 188-193.