Characterisation and Inspection of 50nm Gate-Length Hydrogen Terminated Diamond Field Effect Transistors

Research output: Contribution to conference › Paper › peer-review

Original language	English
Publication status	Published - 2010
Event	2010 MRS Fall Meeting - Boston, MA, United States Duration: 29 Nov 2010 → 3 Dec 2010

Cite this

@conference{b563d676c08947ada2070954e859c601,

title = "Characterisation and Inspection of 50nm Gate-Length Hydrogen Terminated Diamond Field Effect Transistors",

author = "Moran, \{D. A. J.\} and MacLaren, \{D. A.\} and S. Porro and R. Hill and H. McClelland and Phillip John and Wilson, \{John Ivor Barrett\}",

year = "2010",

language = "English",

note = "2010 MRS Fall Meeting ; Conference date: 29-11-2010 Through 03-12-2010",

}

TY - CONF

T1 - Characterisation and Inspection of 50nm Gate-Length Hydrogen Terminated Diamond Field Effect Transistors

AU - Moran, D. A. J.

AU - MacLaren, D. A.

AU - Porro, S.

AU - Hill, R.

AU - McClelland, H.

AU - John, Phillip

AU - Wilson, John Ivor Barrett

PY - 2010

Y1 - 2010

M3 - Paper

T2 - 2010 MRS Fall Meeting

Y2 - 29 November 2010 through 3 December 2010

ER -