CH4/H2 plasma etching of IV-VI semiconductor nanostructures

Thomas Schwarzl, Wolfgang Heiss, Gudrun Kocher-Oberlehner, Gunther Springholz

Research output: Contribution to journalLetter

20 Citations (Scopus)

Abstract

We investigate plasma etching of IV-VI nanostructures using a gas mixture. For various IV-VI compounds we find that the etch rate decreases with the energy band gap. For , in contrast, the etch rate decreases drastically with increasing Eu content. This property can be utilized for selective etching. Furthermore, we demonstrate IV-VI quantum wires with vertical side walls by a combination of laser holography and /Ar plasma etching.
Original languageEnglish
Pages (from-to)L11-L14
Number of pages4
JournalSemiconductor Science and Technology
Volume14
Publication statusPublished - 1999

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    Schwarzl, T., Heiss, W., Kocher-Oberlehner, G., & Springholz, G. (1999). CH4/H2 plasma etching of IV-VI semiconductor nanostructures. Semiconductor Science and Technology, 14, L11-L14.