We investigate plasma etching of IV-VI nanostructures using a gas mixture. For various IV-VI compounds we find that the etch rate decreases with the energy band gap. For , in contrast, the etch rate decreases drastically with increasing Eu content. This property can be utilized for selective etching. Furthermore, we demonstrate IV-VI quantum wires with vertical side walls by a combination of laser holography and /Ar plasma etching.
|Number of pages||4|
|Journal||Semiconductor Science and Technology|
|Publication status||Published - 1999|