CdSe quantum dots grown on a Zn0.2Mg0.8S 0.64Se0.36 barrier: MBE growth and μ-PL characterisation

I. A. Davidson, R. T. Moug, P. A. Dalgarno, C. Bradford, R. J. Warburton, K. A. Prior

Research output: Contribution to journalArticle

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Abstract

We report the growth and characterisation of CdSe quantum dots grown by MBE with Zn0.2Mg0.8S0.64Se0.36 barriers and their subsequent characterisation by 77 K PL and 4 K µ-PL. The 4 K µ-PL spectra showed numerous peaks having spectral diffusion on a timescale of <25 ms. By correlating the variation in peak energies and intensities we are able to assign which transitions arise from individual dots and hence count the number of distinguishable dots within the resolved spot of the microscope system. This is found to be consistent with a dot density of 4±1×1010 cm-2. We also discuss the possible mechanism behind the spectral diffusion seen in these measurements. Correlation of emission intensity from single-dot emission lines was also observed over much longer time periods (~200 s). These results will be compared with previous results from CdSe dots grown on ZnSe barriers. © 2010 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)236-240
Number of pages5
JournalJournal of Crystal Growth
Volume323
Issue number1
DOIs
Publication statusPublished - 15 May 2011

Keywords

  • Cadmium compounds
  • Molecular beam epitaxy
  • Optical microscopy
  • Semiconducting IIVI materials
  • Semiconducting quaternary alloys

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