CdSe quantum dots grown on a Zn0.2Mg0.8S 0.64Se0.36 barrier: MBE growth and μ-PL characterisation

I. A. Davidson; R. T. Moug; P. A. Dalgarno; C. Bradford; R. J. Warburton; K. A. Prior

doi:10.1016/j.jcrysgro.2010.10.116

CdSe quantum dots grown on a Zn_0.2Mg_0.8S _0.64Se_0.36 barrier: MBE growth and μ-PL characterisation

I. A. Davidson, R. T. Moug, P. A. Dalgarno, C. Bradford, R. J. Warburton, K. A. Prior

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report the growth and characterisation of CdSe quantum dots grown by MBE with Zn_0.2Mg_0.8S_0.64Se_0.36 barriers and their subsequent characterisation by 77 K PL and 4 K µ-PL. The 4 K µ-PL spectra showed numerous peaks having spectral diffusion on a timescale of <25 ms. By correlating the variation in peak energies and intensities we are able to assign which transitions arise from individual dots and hence count the number of distinguishable dots within the resolved spot of the microscope system. This is found to be consistent with a dot density of 4±1×10¹⁰ cm^-2. We also discuss the possible mechanism behind the spectral diffusion seen in these measurements. Correlation of emission intensity from single-dot emission lines was also observed over much longer time periods (~200 s). These results will be compared with previous results from CdSe dots grown on ZnSe barriers. © 2010 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	236-240
Number of pages	5
Journal	Journal of Crystal Growth
Volume	323
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.10.116
Publication status	Published - 15 May 2011

Keywords

Cadmium compounds
Molecular beam epitaxy
Optical microscopy
Semiconducting IIVI materials
Semiconducting quaternary alloys

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@article{d1c8e22895784a0e9399af3008c27db9,

title = "CdSe quantum dots grown on a Zn0.2Mg0.8S 0.64Se0.36 barrier: MBE growth and μ-PL characterisation",

abstract = "We report the growth and characterisation of CdSe quantum dots grown by MBE with Zn0.2Mg0.8S0.64Se0.36 barriers and their subsequent characterisation by 77 K PL and 4 K µ-PL. The 4 K µ-PL spectra showed numerous peaks having spectral diffusion on a timescale of <25 ms. By correlating the variation in peak energies and intensities we are able to assign which transitions arise from individual dots and hence count the number of distinguishable dots within the resolved spot of the microscope system. This is found to be consistent with a dot density of 4±1×1010 cm-2. We also discuss the possible mechanism behind the spectral diffusion seen in these measurements. Correlation of emission intensity from single-dot emission lines was also observed over much longer time periods (~200 s). These results will be compared with previous results from CdSe dots grown on ZnSe barriers. {\textcopyright} 2010 Elsevier B.V. All rights reserved.",

keywords = "Cadmium compounds, Molecular beam epitaxy, Optical microscopy, Semiconducting IIVI materials, Semiconducting quaternary alloys",

author = "Davidson, {I. A.} and Moug, {R. T.} and Dalgarno, {P. A.} and C. Bradford and Warburton, {R. J.} and Prior, {K. A.}",

year = "2011",

month = may,

day = "15",

doi = "10.1016/j.jcrysgro.2010.10.116",

language = "English",

volume = "323",

pages = "236--240",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - CdSe quantum dots grown on a Zn0.2Mg0.8S 0.64Se0.36 barrier

T2 - MBE growth and μ-PL characterisation

AU - Davidson, I. A.

AU - Moug, R. T.

AU - Dalgarno, P. A.

AU - Bradford, C.

AU - Warburton, R. J.

AU - Prior, K. A.

PY - 2011/5/15

Y1 - 2011/5/15

N2 - We report the growth and characterisation of CdSe quantum dots grown by MBE with Zn0.2Mg0.8S0.64Se0.36 barriers and their subsequent characterisation by 77 K PL and 4 K µ-PL. The 4 K µ-PL spectra showed numerous peaks having spectral diffusion on a timescale of <25 ms. By correlating the variation in peak energies and intensities we are able to assign which transitions arise from individual dots and hence count the number of distinguishable dots within the resolved spot of the microscope system. This is found to be consistent with a dot density of 4±1×1010 cm-2. We also discuss the possible mechanism behind the spectral diffusion seen in these measurements. Correlation of emission intensity from single-dot emission lines was also observed over much longer time periods (~200 s). These results will be compared with previous results from CdSe dots grown on ZnSe barriers. © 2010 Elsevier B.V. All rights reserved.

AB - We report the growth and characterisation of CdSe quantum dots grown by MBE with Zn0.2Mg0.8S0.64Se0.36 barriers and their subsequent characterisation by 77 K PL and 4 K µ-PL. The 4 K µ-PL spectra showed numerous peaks having spectral diffusion on a timescale of <25 ms. By correlating the variation in peak energies and intensities we are able to assign which transitions arise from individual dots and hence count the number of distinguishable dots within the resolved spot of the microscope system. This is found to be consistent with a dot density of 4±1×1010 cm-2. We also discuss the possible mechanism behind the spectral diffusion seen in these measurements. Correlation of emission intensity from single-dot emission lines was also observed over much longer time periods (~200 s). These results will be compared with previous results from CdSe dots grown on ZnSe barriers. © 2010 Elsevier B.V. All rights reserved.

KW - Cadmium compounds

KW - Molecular beam epitaxy

KW - Optical microscopy

KW - Semiconducting IIVI materials

KW - Semiconducting quaternary alloys

UR - http://www.scopus.com/inward/record.url?scp=78149265345&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2010.10.116

DO - 10.1016/j.jcrysgro.2010.10.116

M3 - Article

SN - 0022-0248

VL - 323

SP - 236

EP - 240

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

CdSe quantum dots grown on a Zn_0.2Mg_0.8S _0.64Se_0.36 barrier: MBE growth and μ-PL characterisation

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Keywords

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