CBRAM technology: transition from a memory cell to a programmable and non-volatile impedance for new radiofrequency applications

Sergio López-Soriano, Jayakrishnan Methapettyparambu Purushothama, Arnaud Vena, Etienne Perret

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Abstract

Electrical resistance control programming of conductive bridging random access memory (CBRAM) radio frequency (RF) switches could benefit the development of electronically controlled non-volatile RF attenuators and other reconfigurable devices. The object of this study is to adapt a conventional CBRAM based memory cell to be used as an RF switch, and to demonstrate the feasibility of programming non-volatile RF CBRAM switches to achieve specific target resistances within a range of continuous values. The memory-RF technologic transition implies a drastic increase of the geometry in order to handle a much higher power, a decrease of the transition capacitance in order to operate at much higher frequencies, and a decrease of the LRS to a few ohms, which is critical for RF applications. These studies are initially performed on an in-house made RF CBRAM cell array at DC frequency, and then extended successfully to a co-planar waveguide (CPW) based shunt mode RF switch with an integrated CBRAM cell. Reliability of the proposed technique is validated through detailed analysis of factors like repeatability of the process, time stability of programmed states, and statistics of time taken to converge to a desired resistance value for an arbitrary RF CBRAM switch.

Original languageEnglish
Article number4105
JournalScientific Reports
Volume12
DOIs
Publication statusPublished - 8 Mar 2022

ASJC Scopus subject areas

  • General

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