Carrier relaxation in InGaAs

M. E. Prise, M. R. Taghizadeh, B. S. Wherrett, S. D. Smith

Research output: Contribution to journalArticle

Abstract

A modelocked Nd: YAG pumped optical parametric amplifier providing 35 ps pulses in the wavelength range ? = 1.45-2.1 µm has been used to study photoexcited carrier recombination in InGaAs. At carrier densities in excess of 1018 cm-3 Auger processes are found to dominate the carrier recombination. An Auger rate of 2.5±0.5×10-28 cm6 s-1 is determined. © 1985.

Original languageEnglish
Pages (from-to)369-374
Number of pages6
JournalJournal of Luminescence
Volume30
Issue number1-4
Publication statusPublished - Feb 1985

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parametric amplifiers
light amplifiers
yttrium-aluminum garnet
pulses
wavelengths

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Prise, M. E., Taghizadeh, M. R., Wherrett, B. S., & Smith, S. D. (1985). Carrier relaxation in InGaAs. Journal of Luminescence, 30(1-4), 369-374.
Prise, M. E. ; Taghizadeh, M. R. ; Wherrett, B. S. ; Smith, S. D. / Carrier relaxation in InGaAs. In: Journal of Luminescence. 1985 ; Vol. 30, No. 1-4. pp. 369-374.
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Prise, ME, Taghizadeh, MR, Wherrett, BS & Smith, SD 1985, 'Carrier relaxation in InGaAs', Journal of Luminescence, vol. 30, no. 1-4, pp. 369-374.

Carrier relaxation in InGaAs. / Prise, M. E.; Taghizadeh, M. R.; Wherrett, B. S.; Smith, S. D.

In: Journal of Luminescence, Vol. 30, No. 1-4, 02.1985, p. 369-374.

Research output: Contribution to journalArticle

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AU - Prise, M. E.

AU - Taghizadeh, M. R.

AU - Wherrett, B. S.

AU - Smith, S. D.

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Prise ME, Taghizadeh MR, Wherrett BS, Smith SD. Carrier relaxation in InGaAs. Journal of Luminescence. 1985 Feb;30(1-4):369-374.