Carrier relaxation in InGaAs

M. E. Prise, M. R. Taghizadeh, B. S. Wherrett, S. D. Smith

Research output: Contribution to journalArticle

Abstract

A modelocked Nd: YAG pumped optical parametric amplifier providing 35 ps pulses in the wavelength range ? = 1.45-2.1 µm has been used to study photoexcited carrier recombination in InGaAs. At carrier densities in excess of 1018 cm-3 Auger processes are found to dominate the carrier recombination. An Auger rate of 2.5±0.5×10-28 cm6 s-1 is determined. © 1985.

Original languageEnglish
Pages (from-to)369-374
Number of pages6
JournalJournal of Luminescence
Volume30
Issue number1-4
Publication statusPublished - Feb 1985

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    Prise, M. E., Taghizadeh, M. R., Wherrett, B. S., & Smith, S. D. (1985). Carrier relaxation in InGaAs. Journal of Luminescence, 30(1-4), 369-374.