A modelocked Nd: YAG pumped optical parametric amplifier providing 35 ps pulses in the wavelength range ? = 1.45-2.1 µm has been used to study photoexcited carrier recombination in InGaAs. At carrier densities in excess of 1018 cm-3 Auger processes are found to dominate the carrier recombination. An Auger rate of 2.5±0.5×10-28 cm6 s-1 is determined. © 1985.
|Number of pages||6|
|Journal||Journal of Luminescence|
|Publication status||Published - Feb 1985|