Carrier relaxation in InGaAs

M. E. Prise, M. R. Taghizadeh, B. S. Wherrett, S. D. Smith

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A modelocked Nd: YAG pumped optical parametric amplifier providing 35 ps pulses in the wavelength range ? = 1.45-2.1 µm has been used to study photoexcited carrier recombination in InGaAs. At carrier densities in excess of 1018 cm-3 Auger processes are found to dominate the carrier recombination. An Auger rate of 2.5±0.5×10-28 cm6 s-1 is determined. © 1985.

Original languageEnglish
Pages (from-to)369-374
Number of pages6
JournalJournal of Luminescence
Issue number1-4
Publication statusPublished - Feb 1985


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