Carrier relaxation in InGaAs

M. E. Prise; M. R. Taghizadeh; B. S. Wherrett; S. D. Smith

Carrier relaxation in InGaAs

M. E. Prise, M. R. Taghizadeh, B. S. Wherrett, S. D. Smith

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A modelocked Nd: YAG pumped optical parametric amplifier providing 35 ps pulses in the wavelength range ? = 1.45-2.1 µm has been used to study photoexcited carrier recombination in InGaAs. At carrier densities in excess of 10¹⁸ cm^-3 Auger processes are found to dominate the carrier recombination. An Auger rate of 2.5±0.5×10^-28 cm⁶ s^-1 is determined. © 1985.

Original language	English
Pages (from-to)	369-374
Number of pages	6
Journal	Journal of Luminescence
Volume	30
Issue number	1-4
Publication status	Published - Feb 1985

Cite this

@article{4e3031d23a634387ac2a82041dd14774,

title = "Carrier relaxation in InGaAs",

abstract = "A modelocked Nd: YAG pumped optical parametric amplifier providing 35 ps pulses in the wavelength range ? = 1.45-2.1 µm has been used to study photoexcited carrier recombination in InGaAs. At carrier densities in excess of 1018 cm-3 Auger processes are found to dominate the carrier recombination. An Auger rate of 2.5±0.5×10-28 cm6 s-1 is determined. {\textcopyright} 1985.",

author = "Prise, {M. E.} and Taghizadeh, {M. R.} and Wherrett, {B. S.} and Smith, {S. D.}",

year = "1985",

month = feb,

language = "English",

volume = "30",

pages = "369--374",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier",

number = "1-4",

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TY - JOUR

T1 - Carrier relaxation in InGaAs

AU - Prise, M. E.

AU - Taghizadeh, M. R.

AU - Wherrett, B. S.

AU - Smith, S. D.

PY - 1985/2

Y1 - 1985/2

N2 - A modelocked Nd: YAG pumped optical parametric amplifier providing 35 ps pulses in the wavelength range ? = 1.45-2.1 µm has been used to study photoexcited carrier recombination in InGaAs. At carrier densities in excess of 1018 cm-3 Auger processes are found to dominate the carrier recombination. An Auger rate of 2.5±0.5×10-28 cm6 s-1 is determined. © 1985.

AB - A modelocked Nd: YAG pumped optical parametric amplifier providing 35 ps pulses in the wavelength range ? = 1.45-2.1 µm has been used to study photoexcited carrier recombination in InGaAs. At carrier densities in excess of 1018 cm-3 Auger processes are found to dominate the carrier recombination. An Auger rate of 2.5±0.5×10-28 cm6 s-1 is determined. © 1985.

UR - http://www.scopus.com/inward/record.url?scp=0021372795&partnerID=8YFLogxK

M3 - Article

SN - 0022-2313

VL - 30

SP - 369

EP - 374

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 1-4

ER -

Carrier relaxation in InGaAs

Abstract

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