Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy

Temperature dependent time-resolved photoluminescence has been used to study the excess carrier recombination in Zn_0.75Cd_0.25Se/ZnSe single quantum well structures grown by molecular beam epitaxy. For temperatures <100 K radiative excitonic recombination appears to dominate, and the photoluminescence (PL) decay time follows the linear dependence on temperature over the range 50-120 K. At higher temperatures the reduction in PL efficiency and decay time indicate that nonradiative processes associated with the ZnCdSe/ZnSe interfaces dominate the recombination. The results are consistent with theoretical predictions.© 1995 American Institute of Physics.