Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy

J. S. Massa, G. S. Buller, A. C. Walker, G. Horsburgh, J. T. Mullins, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

Temperature dependent time-resolved photoluminescence has been used to study the excess carrier recombination in Zn0.75Cd0.25Se/ZnSe single quantum well structures grown by molecular beam epitaxy. For temperatures <100 K radiative excitonic recombination appears to dominate, and the photoluminescence (PL) decay time follows the linear dependence on temperature over the range 50-120 K. At higher temperatures the reduction in PL efficiency and decay time indicate that nonradiative processes associated with the ZnCdSe/ZnSe interfaces dominate the recombination. The results are consistent with theoretical predictions.© 1995 American Institute of Physics.

Original languageEnglish
Pages (from-to)1346-
JournalApplied Physics Letters
Publication statusPublished - 1995

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    Massa, J. S., Buller, G. S., Walker, A. C., Horsburgh, G., Mullins, J. T., Prior, K. A., & Cavenett, B. C. (1995). Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy. Applied Physics Letters, 1346-.