Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy

J. S. Massa; G. S. Buller; A. C. Walker; G. Horsburgh; J. T. Mullins; K. A. Prior; B. C. Cavenett

Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy

J. S. Massa, G. S. Buller, A. C. Walker, G. Horsburgh, J. T. Mullins, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

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22 Citations (Scopus)

Abstract

Temperature dependent time-resolved photoluminescence has been used to study the excess carrier recombination in Zn_0.75Cd_0.25Se/ZnSe single quantum well structures grown by molecular beam epitaxy. For temperatures <100 K radiative excitonic recombination appears to dominate, and the photoluminescence (PL) decay time follows the linear dependence on temperature over the range 50-120 K. At higher temperatures the reduction in PL efficiency and decay time indicate that nonradiative processes associated with the ZnCdSe/ZnSe interfaces dominate the recombination. The results are consistent with theoretical predictions.© 1995 American Institute of Physics.

Original language	English
Pages (from-to)	1346-
Journal	Applied Physics Letters
Publication status	Published - 1995

Cite this

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title = "Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy",

abstract = "Temperature dependent time-resolved photoluminescence has been used to study the excess carrier recombination in Zn0.75Cd0.25Se/ZnSe single quantum well structures grown by molecular beam epitaxy. For temperatures <100 K radiative excitonic recombination appears to dominate, and the photoluminescence (PL) decay time follows the linear dependence on temperature over the range 50-120 K. At higher temperatures the reduction in PL efficiency and decay time indicate that nonradiative processes associated with the ZnCdSe/ZnSe interfaces dominate the recombination. The results are consistent with theoretical predictions.{\textcopyright} 1995 American Institute of Physics.",

author = "Massa, {J. S.} and Buller, {G. S.} and Walker, {A. C.} and G. Horsburgh and Mullins, {J. T.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1995",

language = "English",

pages = "1346--",

journal = "Applied Physics Letters",

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T1 - Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy

AU - Massa, J. S.

AU - Buller, G. S.

AU - Walker, A. C.

AU - Horsburgh, G.

AU - Mullins, J. T.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1995

Y1 - 1995

N2 - Temperature dependent time-resolved photoluminescence has been used to study the excess carrier recombination in Zn0.75Cd0.25Se/ZnSe single quantum well structures grown by molecular beam epitaxy. For temperatures <100 K radiative excitonic recombination appears to dominate, and the photoluminescence (PL) decay time follows the linear dependence on temperature over the range 50-120 K. At higher temperatures the reduction in PL efficiency and decay time indicate that nonradiative processes associated with the ZnCdSe/ZnSe interfaces dominate the recombination. The results are consistent with theoretical predictions.© 1995 American Institute of Physics.

AB - Temperature dependent time-resolved photoluminescence has been used to study the excess carrier recombination in Zn0.75Cd0.25Se/ZnSe single quantum well structures grown by molecular beam epitaxy. For temperatures <100 K radiative excitonic recombination appears to dominate, and the photoluminescence (PL) decay time follows the linear dependence on temperature over the range 50-120 K. At higher temperatures the reduction in PL efficiency and decay time indicate that nonradiative processes associated with the ZnCdSe/ZnSe interfaces dominate the recombination. The results are consistent with theoretical predictions.© 1995 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=36449008537&partnerID=8YFLogxK

M3 - Article

SN - 0003-6951

SP - 1346-

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy

Abstract

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