Carrier lifetime in MBE and MOCVD InGaAs quantum wells

J. E. Ehrlich; D. T. Neilson; A. C. Walker; G. T. Kennedy; R. S. Grant; W. Sibbett; M. Hopkinson

doi:10.1088/0268-1242/8/2/025

Carrier lifetime in MBE and MOCVD InGaAs quantum wells

J. E. Ehrlich
, D. T. Neilson
, A. C. Walker
, G. T. Kennedy
, R. S. Grant
, W. Sibbett
, M. Hopkinson

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 µm. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6×10¹⁷ cm^-3.

Original language	English
Pages (from-to)	307-309
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	8
Issue number	2
DOIs	https://doi.org/10.1088/0268-1242/8/2/025
Publication status	Published - Feb 1993

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title = "Carrier lifetime in MBE and MOCVD InGaAs quantum wells",

abstract = "Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 µm. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6×1017 cm-3.",

author = "Ehrlich, \{J. E.\} and Neilson, \{D. T.\} and Walker, \{A. C.\} and Kennedy, \{G. T.\} and Grant, \{R. S.\} and W. Sibbett and M. Hopkinson",

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doi = "10.1088/0268-1242/8/2/025",

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T1 - Carrier lifetime in MBE and MOCVD InGaAs quantum wells

AU - Ehrlich, J. E.

AU - Neilson, D. T.

AU - Walker, A. C.

AU - Kennedy, G. T.

AU - Grant, R. S.

AU - Sibbett, W.

AU - Hopkinson, M.

PY - 1993/2

Y1 - 1993/2

N2 - Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 µm. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6×1017 cm-3.

AB - Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 µm. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6×1017 cm-3.

UR - https://www.scopus.com/pages/publications/0027544283

U2 - 10.1088/0268-1242/8/2/025

DO - 10.1088/0268-1242/8/2/025

M3 - Article

SN - 0268-1242

VL - 8

SP - 307

EP - 309

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 2

ER -

Carrier lifetime in MBE and MOCVD InGaAs quantum wells

Abstract

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