Carrier lifetime in MBE and MOCVD InGaAs quantum wells

J. E. Ehrlich, D. T. Neilson, A. C. Walker, G. T. Kennedy, R. S. Grant, W. Sibbett, M. Hopkinson

Research output: Contribution to journalArticle

Abstract

Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 µm. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6×1017 cm-3.

Original languageEnglish
Pages (from-to)307-309
Number of pages3
JournalSemiconductor Science and Technology
Volume8
Issue number2
DOIs
Publication statusPublished - Feb 1993

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