Carrier lifetime in MBE and MOCVD InGaAs quantum wells

J. E. Ehrlich; D. T. Neilson; A. C. Walker; G. T. Kennedy; R. S. Grant; W. Sibbett; M. Hopkinson

doi:10.1088/0268-1242/8/2/025

Carrier lifetime in MBE and MOCVD InGaAs quantum wells

J. E. Ehrlich, D. T. Neilson, A. C. Walker, G. T. Kennedy, R. S. Grant, W. Sibbett, M. Hopkinson

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 µm. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6×10¹⁷ cm^-3.

Original language	English
Pages (from-to)	307-309
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	8
Issue number	2
DOIs	https://doi.org/10.1088/0268-1242/8/2/025
Publication status	Published - Feb 1993

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title = "Carrier lifetime in MBE and MOCVD InGaAs quantum wells",

abstract = "Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 µm. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6×1017 cm-3.",

author = "Ehrlich, {J. E.} and Neilson, {D. T.} and Walker, {A. C.} and Kennedy, {G. T.} and Grant, {R. S.} and W. Sibbett and M. Hopkinson",

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AU - Ehrlich, J. E.

AU - Neilson, D. T.

AU - Walker, A. C.

AU - Kennedy, G. T.

AU - Grant, R. S.

AU - Sibbett, W.

AU - Hopkinson, M.

PY - 1993/2

Y1 - 1993/2

N2 - Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 µm. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6×1017 cm-3.

AB - Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 µm. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6×1017 cm-3.

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VL - 8

SP - 307

EP - 309

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 2

ER -

Carrier lifetime in MBE and MOCVD InGaAs quantum wells

Abstract

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