CARRIER DYNAMICS IN GaInAs.

M. E. Prise; M. R. Taghizadeh; S. D. Smith; B. S. Wherrett

CARRIER DYNAMICS IN GaInAs.

M. E. Prise, M. R. Taghizadeh, S. D. Smith, B. S. Wherrett

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have determined the Auger recombination rate in Ga//0//. //4//7In//0//. //5//3P to be 2. 5( plus or minus 0. 5) multiplied by 10** minus **2**8cm**6s** minus **1 at carrier densities in the range 1. 0 to 2. 5 multiplied by 10**1**8cm** minus **3, similar to those at threshold in semiconductor lasers. This result is slightly higher than that obtained from a similar experiment using only 1. 06 mu m radiation and a more complicated model taking into account spatial carrier distributions.

Original language	English
Title of host publication	Institute of Physics Conference Series
Pages	311-314
Number of pages	4
Edition	74
Publication status	Published - 1985

Cite this

@inproceedings{c52a898827214d0489a6cf145a52de4f,

title = "CARRIER DYNAMICS IN GaInAs.",

abstract = "We have determined the Auger recombination rate in Ga//0//. //4//7In//0//. //5//3P to be 2. 5( plus or minus 0. 5) multiplied by 10** minus **2**8cm**6s** minus **1 at carrier densities in the range 1. 0 to 2. 5 multiplied by 10**1**8cm** minus **3, similar to those at threshold in semiconductor lasers. This result is slightly higher than that obtained from a similar experiment using only 1. 06 mu m radiation and a more complicated model taking into account spatial carrier distributions.",

author = "Prise, {M. E.} and Taghizadeh, {M. R.} and Smith, {S. D.} and Wherrett, {B. S.}",

year = "1985",

language = "English",

isbn = "0854981659",

pages = "311--314",

booktitle = "Institute of Physics Conference Series",

edition = "74",

}

TY - GEN

T1 - CARRIER DYNAMICS IN GaInAs.

AU - Prise, M. E.

AU - Taghizadeh, M. R.

AU - Smith, S. D.

AU - Wherrett, B. S.

PY - 1985

Y1 - 1985

N2 - We have determined the Auger recombination rate in Ga//0//. //4//7In//0//. //5//3P to be 2. 5( plus or minus 0. 5) multiplied by 10** minus **2**8cm**6s** minus **1 at carrier densities in the range 1. 0 to 2. 5 multiplied by 10**1**8cm** minus **3, similar to those at threshold in semiconductor lasers. This result is slightly higher than that obtained from a similar experiment using only 1. 06 mu m radiation and a more complicated model taking into account spatial carrier distributions.

AB - We have determined the Auger recombination rate in Ga//0//. //4//7In//0//. //5//3P to be 2. 5( plus or minus 0. 5) multiplied by 10** minus **2**8cm**6s** minus **1 at carrier densities in the range 1. 0 to 2. 5 multiplied by 10**1**8cm** minus **3, similar to those at threshold in semiconductor lasers. This result is slightly higher than that obtained from a similar experiment using only 1. 06 mu m radiation and a more complicated model taking into account spatial carrier distributions.

M3 - Conference contribution

SN - 0854981659

SP - 311

EP - 314

BT - Institute of Physics Conference Series

ER -

CARRIER DYNAMICS IN GaInAs.

Abstract

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