### Abstract

We have determined the Auger recombination rate in Ga//0//. //4//7In//0//. //5//3P to be 2. 5( plus or minus 0. 5) multiplied by 10** minus **2**8cm**6s** minus **1 at carrier densities in the range 1. 0 to 2. 5 multiplied by 10**1**8cm** minus **3, similar to those at threshold in semiconductor lasers. This result is slightly higher than that obtained from a similar experiment using only 1. 06 mu m radiation and a more complicated model taking into account spatial carrier distributions.

Original language | English |
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Title of host publication | Institute of Physics Conference Series |

Pages | 311-314 |

Number of pages | 4 |

Edition | 74 |

Publication status | Published - 1985 |

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## Cite this

Prise, M. E., Taghizadeh, M. R., Smith, S. D., & Wherrett, B. S. (1985). CARRIER DYNAMICS IN GaInAs. In

*Institute of Physics Conference Series*(74 ed., pp. 311-314)