We have determined the Auger recombination rate in Ga//0//. //4//7In//0//. //5//3P to be 2. 5( plus or minus 0. 5) multiplied by 10** minus **2**8cm**6s** minus **1 at carrier densities in the range 1. 0 to 2. 5 multiplied by 10**1**8cm** minus **3, similar to those at threshold in semiconductor lasers. This result is slightly higher than that obtained from a similar experiment using only 1. 06 mu m radiation and a more complicated model taking into account spatial carrier distributions.
|Title of host publication||Institute of Physics Conference Series|
|Number of pages||4|
|Publication status||Published - 1985|