CARRIER DYNAMICS IN GaInAs.

M. E. Prise, M. R. Taghizadeh, S. D. Smith, B. S. Wherrett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have determined the Auger recombination rate in Ga//0//. //4//7In//0//. //5//3P to be 2. 5( plus or minus 0. 5) multiplied by 10** minus **2**8cm**6s** minus **1 at carrier densities in the range 1. 0 to 2. 5 multiplied by 10**1**8cm** minus **3, similar to those at threshold in semiconductor lasers. This result is slightly higher than that obtained from a similar experiment using only 1. 06 mu m radiation and a more complicated model taking into account spatial carrier distributions.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
Pages311-314
Number of pages4
Edition74
Publication statusPublished - 1985

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  • Cite this

    Prise, M. E., Taghizadeh, M. R., Smith, S. D., & Wherrett, B. S. (1985). CARRIER DYNAMICS IN GaInAs. In Institute of Physics Conference Series (74 ed., pp. 311-314)