Carrier dynamics and emission-line narrowing in n- and p-type molecular-beam grown ZnSe epilayers

J. A. Bolger; A. K. Kar; B. S. Wherrett; K. A. Prior; J. Simpson; S. Y. Wang; B. C. Cavenett

doi:10.1063/1.109980

Carrier dynamics and emission-line narrowing in n- and p-type molecular-beam grown ZnSe epilayers

J. A. Bolger, A. K. Kar, B. S. Wherrett, K. A. Prior, J. Simpson, S. Y. Wang, B. C. Cavenett

School of Engineering & Physical Sciences

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Abstract

Carrier recombination processes in thin-film epitaxial ZnSe are investigated using a transient-grating technique. For photoexcitation levels in the 10¹⁷-10¹⁸ cm^-3 range the dominant recombination mechanism is found to be radiative, described by a rate coefficient of 8×10^-9 cm³ s^-1. For densities exceeding approximately 2×10¹⁸ cm^-3 ultrafast grating recovery is observed, accompanied by line narrowing of the near-band-edge blue photoluminescence; this is interpreted as being due to stimulated radiative recombination.

Original language	English
Pages (from-to)	571-573
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	5
DOIs	https://doi.org/10.1063/1.109980
Publication status	Published - 1993

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title = "Carrier dynamics and emission-line narrowing in n- and p-type molecular-beam grown ZnSe epilayers",

abstract = "Carrier recombination processes in thin-film epitaxial ZnSe are investigated using a transient-grating technique. For photoexcitation levels in the 1017-1018 cm-3 range the dominant recombination mechanism is found to be radiative, described by a rate coefficient of 8×10-9 cm3 s-1. For densities exceeding approximately 2×1018 cm-3 ultrafast grating recovery is observed, accompanied by line narrowing of the near-band-edge blue photoluminescence; this is interpreted as being due to stimulated radiative recombination.",

author = "Bolger, {J. A.} and Kar, {A. K.} and Wherrett, {B. S.} and Prior, {K. A.} and J. Simpson and Wang, {S. Y.} and Cavenett, {B. C.}",

year = "1993",

doi = "10.1063/1.109980",

language = "English",

volume = "63",

pages = "571--573",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Carrier dynamics and emission-line narrowing in n- and p-type molecular-beam grown ZnSe epilayers

AU - Bolger, J. A.

AU - Kar, A. K.

AU - Wherrett, B. S.

AU - Prior, K. A.

AU - Simpson, J.

AU - Wang, S. Y.

AU - Cavenett, B. C.

PY - 1993

Y1 - 1993

N2 - Carrier recombination processes in thin-film epitaxial ZnSe are investigated using a transient-grating technique. For photoexcitation levels in the 1017-1018 cm-3 range the dominant recombination mechanism is found to be radiative, described by a rate coefficient of 8×10-9 cm3 s-1. For densities exceeding approximately 2×1018 cm-3 ultrafast grating recovery is observed, accompanied by line narrowing of the near-band-edge blue photoluminescence; this is interpreted as being due to stimulated radiative recombination.

AB - Carrier recombination processes in thin-film epitaxial ZnSe are investigated using a transient-grating technique. For photoexcitation levels in the 1017-1018 cm-3 range the dominant recombination mechanism is found to be radiative, described by a rate coefficient of 8×10-9 cm3 s-1. For densities exceeding approximately 2×1018 cm-3 ultrafast grating recovery is observed, accompanied by line narrowing of the near-band-edge blue photoluminescence; this is interpreted as being due to stimulated radiative recombination.

UR - http://www.scopus.com/inward/record.url?scp=0038984166&partnerID=8YFLogxK

U2 - 10.1063/1.109980

DO - 10.1063/1.109980

M3 - Article

SN - 0003-6951

VL - 63

SP - 571

EP - 573

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Carrier dynamics and emission-line narrowing in n- and p-type molecular-beam grown ZnSe epilayers

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