Abstract
Carrier recombination processes in thin-film epitaxial ZnSe are investigated using a transient-grating technique. For photoexcitation levels in the 1017-1018 cm-3 range the dominant recombination mechanism is found to be radiative, described by a rate coefficient of 8×10-9 cm3 s-1. For densities exceeding approximately 2×1018 cm-3 ultrafast grating recovery is observed, accompanied by line narrowing of the near-band-edge blue photoluminescence; this is interpreted as being due to stimulated radiative recombination.
Original language | English |
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Pages (from-to) | 571-573 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 63 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1993 |