Carrier dynamics and emission-line narrowing in n- and p-type molecular-beam grown ZnSe epilayers

J. A. Bolger, A. K. Kar, B. S. Wherrett, K. A. Prior, J. Simpson, S. Y. Wang, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

Carrier recombination processes in thin-film epitaxial ZnSe are investigated using a transient-grating technique. For photoexcitation levels in the 1017-1018 cm-3 range the dominant recombination mechanism is found to be radiative, described by a rate coefficient of 8×10-9 cm3 s-1. For densities exceeding approximately 2×1018 cm-3 ultrafast grating recovery is observed, accompanied by line narrowing of the near-band-edge blue photoluminescence; this is interpreted as being due to stimulated radiative recombination.

Original languageEnglish
Pages (from-to)571-573
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number5
DOIs
Publication statusPublished - 1993

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    Bolger, J. A., Kar, A. K., Wherrett, B. S., Prior, K. A., Simpson, J., Wang, S. Y., & Cavenett, B. C. (1993). Carrier dynamics and emission-line narrowing in n- and p-type molecular-beam grown ZnSe epilayers. Applied Physics Letters, 63(5), 571-573. https://doi.org/10.1063/1.109980