Carrier-dependent nonlinearities and modulation in an InGaAs SQW waveguide

J. E. Ehrlich, D. T. Neilson, A. C. Walker

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


We report measurements of optically induced carrier-dependent refractive index changes and their saturation in an InGaAs single quantum well centered within a linear multiple quantum well guided-wave Fabry-Perot resonator using diode laser sources. A low-excitation nonlinear refractive cross-section sn = -1 × 10-19 cm3 was deduced for probe wavelengths near the TM absorption edge, falling only to sn = -3.1 × 10-20 cm3, over 0.16 µm from the bandedge. For an incident irradiance of 18 kW / cm2, refractive index changes in the InGaAs quantum well as large as -0.16 were deduced near the absorption edge, while the index change at a wavelength 0.16 µm from the absorption edge was -0.055. This large off-resonant index change is attributed to an enhanced free-carrier contribution within a 2-D system.

Original languageEnglish
Pages (from-to)2319-2324
Number of pages6
JournalIEEE Journal of Quantum Electronics
Issue number8
Publication statusPublished - Aug 1993


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