TY - JOUR
T1 - C-Band and X-Band Switchable Frequency-Selective Surface
AU - Farooq, Umer
AU - Iftikhar, Adnan
AU - Shafique, Muhammad Farhan
AU - Khan, Muhammad Saeed
AU - Fida, Adnan
AU - Mughal, Muhammad Juanid
AU - Anagnostou, Dimitris E.
N1 - Funding Information:
This work was supported in part by the EU H2020 Marie Sk?odowska-Curie Individual Fellowship under Grant # 840854 (VisionRF), and by COMSATS University Islamabad under the COMSATS Research Grant Program (No. 16-65/CGRP/CUI/ISB/18/849).
Funding Information:
Funding: This work was supported in part by the EU H2020 Marie Skłodowska-Curie Individual Fellowship under Grant # 840854 (VisionRF), and by COMSATS University Islamabad under the COMSATS Research Grant Program (No. 16-65/CGRP/CUI/ISB/18/849).
Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/2/17
Y1 - 2021/2/17
N2 - This paper presents a highly compact frequency-selective surface (FSS) that has the potential to switch between the X-band (8 GHz–12 GHz) and C-band (4 GHz–8 GHz) for RF shielding applications. The proposed FSS is composed of a square conducting loop with inward-extended arms loaded with curved extensions. The symmetric geometry allows the RF shield to perform equally for transverse electric (TE), transverse magnetic (TM), and 45∘ polarizations. The unit cell has a dimension of 0.176 λ0 and has excellent angular stability up to 60∘. The resonance mechanism was investigated using equivalent circuit models of the shield. The design of the unit element allowed incorporation of PIN diodes between adjacent elements for switching to a lower C-band spectrum at 6.6 GHz. The biasing network is on the bottom layer of the substrate to avoid effects on the shielding performance. A PIN diode configuration for the switching operation was also proposed. In simulations, the PIN diode model was incorporated to observe the switchable operation. Two prototypes were fabricated, and the switchable operation was demonstrated by etching copper strips on one fabricated prototype between adjacent unit cells (in lieu of PIN diodes) as a proof of the design prototypes. Comparisons among the results confirmed that the design offers high angular stability and excellent performance in both bands.
AB - This paper presents a highly compact frequency-selective surface (FSS) that has the potential to switch between the X-band (8 GHz–12 GHz) and C-band (4 GHz–8 GHz) for RF shielding applications. The proposed FSS is composed of a square conducting loop with inward-extended arms loaded with curved extensions. The symmetric geometry allows the RF shield to perform equally for transverse electric (TE), transverse magnetic (TM), and 45∘ polarizations. The unit cell has a dimension of 0.176 λ0 and has excellent angular stability up to 60∘. The resonance mechanism was investigated using equivalent circuit models of the shield. The design of the unit element allowed incorporation of PIN diodes between adjacent elements for switching to a lower C-band spectrum at 6.6 GHz. The biasing network is on the bottom layer of the substrate to avoid effects on the shielding performance. A PIN diode configuration for the switching operation was also proposed. In simulations, the PIN diode model was incorporated to observe the switchable operation. Two prototypes were fabricated, and the switchable operation was demonstrated by etching copper strips on one fabricated prototype between adjacent unit cells (in lieu of PIN diodes) as a proof of the design prototypes. Comparisons among the results confirmed that the design offers high angular stability and excellent performance in both bands.
KW - Active FSS
KW - C-band
KW - Frequency-selective surface (FSS)
KW - Spatial filters
KW - Switchable
KW - X-band
UR - http://www.scopus.com/inward/record.url?scp=85101055606&partnerID=8YFLogxK
U2 - 10.3390/electronics10040476
DO - 10.3390/electronics10040476
M3 - Article
SN - 2079-9292
VL - 10
JO - Electronics
JF - Electronics
IS - 4
M1 - 476
ER -