Abstract
In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.
Original language | English |
---|---|
Article number | 5482061 |
Pages (from-to) | 1205-1207 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 22 |
Issue number | 16 |
DOIs | |
Publication status | Published - 15 Aug 2010 |
Keywords
- Quantum-well (QW) lasers
- semiconductor lasers
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering