Broadly tunable InGaAs-PInP strained multiquantum-well external cavity diode laser

Ksenia A. Fedorova, Maria Ana Cataluna, Igor Kudryashov, Victor Khalfin, Edik U. Rafailov

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

Original languageEnglish
Article number5482061
Pages (from-to)1205-1207
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number16
DOIs
Publication statusPublished - 15 Aug 2010

Keywords

  • Quantum-well (QW) lasers
  • semiconductor lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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