Broadly tunable InGaAs-PInP strained multiquantum-well external cavity diode laser

Ksenia A. Fedorova; Maria Ana Cataluna; Igor Kudryashov; Victor Khalfin; Edik U. Rafailov

doi:10.1109/LPT.2010.2051661

Broadly tunable InGaAs-PInP strained multiquantum-well external cavity diode laser

Ksenia A. Fedorova, Maria Ana Cataluna, Igor Kudryashov, Victor Khalfin, Edik U. Rafailov

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

Original language	English
Article number	5482061
Pages (from-to)	1205-1207
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	16
DOIs	https://doi.org/10.1109/LPT.2010.2051661
Publication status	Published - 15 Aug 2010

Keywords

Quantum-well (QW) lasers
semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2010.2051661

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abstract = "In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.",

keywords = "Quantum-well (QW) lasers, semiconductor lasers",

author = "Fedorova, {Ksenia A.} and Cataluna, {Maria Ana} and Igor Kudryashov and Victor Khalfin and Rafailov, {Edik U.}",

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AU - Fedorova, Ksenia A.

AU - Cataluna, Maria Ana

AU - Kudryashov, Igor

AU - Khalfin, Victor

AU - Rafailov, Edik U.

PY - 2010/8/15

Y1 - 2010/8/15

N2 - In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

AB - In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated.

KW - Quantum-well (QW) lasers

KW - semiconductor lasers

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U2 - 10.1109/LPT.2010.2051661

DO - 10.1109/LPT.2010.2051661

M3 - Article

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JF - IEEE Photonics Technology Letters

IS - 16

M1 - 5482061

ER -

Broadly tunable InGaAs-PInP strained multiquantum-well external cavity diode laser

Abstract

Keywords

ASJC Scopus subject areas

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