Bound-bound intraband resonance and inhomogeneous photoluminescence broadening in InAs/GaAs quantum dots

C. R. Pidgeon, P. C. Findlay, J. P R Wells, I. V. Bradley, B. N. Murdin, A. R. Hollingworth, J. A. Barker, S. Malik, R. Murray

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An inter/intra-band double-resonance technique that allows to make an unequivocal assignment of the resonant bound-bound intersublevel absorption in self-organized InAs/GaAs quantum dots is developed. The method is applied to dots grown at a low growth rate, which show well resolved photoluminescence (PL) lines. The double resonance and its polarization selection rules allows the identification not only the levels involved in the PL transition but the relative importance of the causes of its inhomogeneous broadening.

Original languageEnglish
Title of host publicationInternational Quantum Electronics Conference Proceedings
Pages195
Publication statusPublished - 2000
Event2000 International Quantum Electronics Conference - Nice, France
Duration: 10 Sep 200015 Sep 2000

Conference

Conference2000 International Quantum Electronics Conference
Abbreviated titleIQEC 2000
CountryFrance
CityNice
Period10/09/0015/09/00

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    Pidgeon, C. R., Findlay, P. C., Wells, J. P. R., Bradley, I. V., Murdin, B. N., Hollingworth, A. R., Barker, J. A., Malik, S., & Murray, R. (2000). Bound-bound intraband resonance and inhomogeneous photoluminescence broadening in InAs/GaAs quantum dots. In International Quantum Electronics Conference Proceedings (pp. 195)