Bound-bound intraband resonance and inhomogeneous photoluminescence broadening in InAs/GaAs quantum dots

C. R. Pidgeon; P. C. Findlay; J. P R Wells; I. V. Bradley; B. N. Murdin; A. R. Hollingworth; J. A. Barker; S. Malik; R. Murray

Bound-bound intraband resonance and inhomogeneous photoluminescence broadening in InAs/GaAs quantum dots

C. R. Pidgeon, P. C. Findlay, J. P R Wells, I. V. Bradley, B. N. Murdin, A. R. Hollingworth, J. A. Barker, S. Malik, R. Murray

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An inter/intra-band double-resonance technique that allows to make an unequivocal assignment of the resonant bound-bound intersublevel absorption in self-organized InAs/GaAs quantum dots is developed. The method is applied to dots grown at a low growth rate, which show well resolved photoluminescence (PL) lines. The double resonance and its polarization selection rules allows the identification not only the levels involved in the PL transition but the relative importance of the causes of its inhomogeneous broadening.

Original language	English
Title of host publication	International Quantum Electronics Conference Proceedings
Pages	195
Publication status	Published - 2000
Event	2000 International Quantum Electronics Conference - Nice, France Duration: 10 Sept 2000 → 15 Sept 2000

Conference

Conference	2000 International Quantum Electronics Conference
Abbreviated title	IQEC 2000
Country/Territory	France
City	Nice
Period	10/09/00 → 15/09/00

Cite this

@inproceedings{5c5853ff337d45ef89cd6743ef360345,

title = "Bound-bound intraband resonance and inhomogeneous photoluminescence broadening in InAs/GaAs quantum dots",

abstract = "An inter/intra-band double-resonance technique that allows to make an unequivocal assignment of the resonant bound-bound intersublevel absorption in self-organized InAs/GaAs quantum dots is developed. The method is applied to dots grown at a low growth rate, which show well resolved photoluminescence (PL) lines. The double resonance and its polarization selection rules allows the identification not only the levels involved in the PL transition but the relative importance of the causes of its inhomogeneous broadening.",

author = "Pidgeon, {C. R.} and Findlay, {P. C.} and Wells, {J. P R} and Bradley, {I. V.} and Murdin, {B. N.} and Hollingworth, {A. R.} and Barker, {J. A.} and S. Malik and R. Murray",

year = "2000",

language = "English",

pages = "195",

booktitle = "International Quantum Electronics Conference Proceedings",

note = "2000 International Quantum Electronics Conference, IQEC 2000 ; Conference date: 10-09-2000 Through 15-09-2000",

}

Pidgeon, CR, Findlay, PC, Wells, JPR, Bradley, IV, Murdin, BN, Hollingworth, AR, Barker, JA, Malik, S & Murray, R 2000, Bound-bound intraband resonance and inhomogeneous photoluminescence broadening in InAs/GaAs quantum dots. in International Quantum Electronics Conference Proceedings. pp. 195, 2000 International Quantum Electronics Conference, Nice, France, 10/09/00.

TY - GEN

T1 - Bound-bound intraband resonance and inhomogeneous photoluminescence broadening in InAs/GaAs quantum dots

AU - Pidgeon, C. R.

AU - Findlay, P. C.

AU - Wells, J. P R

AU - Bradley, I. V.

AU - Murdin, B. N.

AU - Hollingworth, A. R.

AU - Barker, J. A.

AU - Malik, S.

AU - Murray, R.

PY - 2000

Y1 - 2000

N2 - An inter/intra-band double-resonance technique that allows to make an unequivocal assignment of the resonant bound-bound intersublevel absorption in self-organized InAs/GaAs quantum dots is developed. The method is applied to dots grown at a low growth rate, which show well resolved photoluminescence (PL) lines. The double resonance and its polarization selection rules allows the identification not only the levels involved in the PL transition but the relative importance of the causes of its inhomogeneous broadening.

AB - An inter/intra-band double-resonance technique that allows to make an unequivocal assignment of the resonant bound-bound intersublevel absorption in self-organized InAs/GaAs quantum dots is developed. The method is applied to dots grown at a low growth rate, which show well resolved photoluminescence (PL) lines. The double resonance and its polarization selection rules allows the identification not only the levels involved in the PL transition but the relative importance of the causes of its inhomogeneous broadening.

M3 - Conference contribution

SP - 195

BT - International Quantum Electronics Conference Proceedings

T2 - 2000 International Quantum Electronics Conference

Y2 - 10 September 2000 through 15 September 2000

ER -

Bound-bound intraband resonance and inhomogeneous photoluminescence broadening in InAs/GaAs quantum dots

Abstract

Conference

Fingerprint

Cite this