Blue stimulated emission from a ZnSe p-n diode at low temperature

S. Y. Wang, I. Hauksson, J. Simpson, H. Stewart, S. J A Adams, J. M. Wallace, Y. Kawakami, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticlepeer-review

Abstract

Laser diode structures have been fabricated using molecular beam epitaxy with iodine from an electrochemical source for the n-type doping and nitrogen from a plasma source for the p-type doping. CV profiling using electrochemical etching shows uniform p doping of 4×1017 cm-3 and n doping of 1×1018 cm-3. Under pulsed current excitation blue emission at 470 nm is observed at room temperature which increases in intensity at liquid helium temperatures. Above a current density threshold of 50 A cm-2 stimulated emission is observed between 448-473 nm with a complicated mode structure.

Original languageEnglish
Pages (from-to)506-508
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number5
DOIs
Publication statusPublished - 1992

Fingerprint

Dive into the research topics of 'Blue stimulated emission from a ZnSe p-n diode at low temperature'. Together they form a unique fingerprint.

Cite this