Blue stimulated emission from a ZnSe p-n diode at low temperature

S. Y. Wang, I. Hauksson, J. Simpson, H. Stewart, S. J A Adams, J. M. Wallace, Y. Kawakami, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

Laser diode structures have been fabricated using molecular beam epitaxy with iodine from an electrochemical source for the n-type doping and nitrogen from a plasma source for the p-type doping. CV profiling using electrochemical etching shows uniform p doping of 4×1017 cm-3 and n doping of 1×1018 cm-3. Under pulsed current excitation blue emission at 470 nm is observed at room temperature which increases in intensity at liquid helium temperatures. Above a current density threshold of 50 A cm-2 stimulated emission is observed between 448-473 nm with a complicated mode structure.

Original languageEnglish
Pages (from-to)506-508
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number5
DOIs
Publication statusPublished - 1992

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stimulated emission
diodes
liquid helium
iodine
molecular beam epitaxy
semiconductor lasers
etching
current density
nitrogen
thresholds
room temperature
excitation
temperature

Cite this

Wang, S. Y., Hauksson, I., Simpson, J., Stewart, H., Adams, S. J. A., Wallace, J. M., ... Cavenett, B. C. (1992). Blue stimulated emission from a ZnSe p-n diode at low temperature. Applied Physics Letters, 61(5), 506-508. https://doi.org/10.1063/1.107869
Wang, S. Y. ; Hauksson, I. ; Simpson, J. ; Stewart, H. ; Adams, S. J A ; Wallace, J. M. ; Kawakami, Y. ; Prior, K. A. ; Cavenett, B. C. / Blue stimulated emission from a ZnSe p-n diode at low temperature. In: Applied Physics Letters. 1992 ; Vol. 61, No. 5. pp. 506-508.
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abstract = "Laser diode structures have been fabricated using molecular beam epitaxy with iodine from an electrochemical source for the n-type doping and nitrogen from a plasma source for the p-type doping. CV profiling using electrochemical etching shows uniform p doping of 4×1017 cm-3 and n doping of 1×1018 cm-3. Under pulsed current excitation blue emission at 470 nm is observed at room temperature which increases in intensity at liquid helium temperatures. Above a current density threshold of 50 A cm-2 stimulated emission is observed between 448-473 nm with a complicated mode structure.",
author = "Wang, {S. Y.} and I. Hauksson and J. Simpson and H. Stewart and Adams, {S. J A} and Wallace, {J. M.} and Y. Kawakami and Prior, {K. A.} and Cavenett, {B. C.}",
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Wang, SY, Hauksson, I, Simpson, J, Stewart, H, Adams, SJA, Wallace, JM, Kawakami, Y, Prior, KA & Cavenett, BC 1992, 'Blue stimulated emission from a ZnSe p-n diode at low temperature', Applied Physics Letters, vol. 61, no. 5, pp. 506-508. https://doi.org/10.1063/1.107869

Blue stimulated emission from a ZnSe p-n diode at low temperature. / Wang, S. Y.; Hauksson, I.; Simpson, J.; Stewart, H.; Adams, S. J A; Wallace, J. M.; Kawakami, Y.; Prior, K. A.; Cavenett, B. C.

In: Applied Physics Letters, Vol. 61, No. 5, 1992, p. 506-508.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Blue stimulated emission from a ZnSe p-n diode at low temperature

AU - Wang, S. Y.

AU - Hauksson, I.

AU - Simpson, J.

AU - Stewart, H.

AU - Adams, S. J A

AU - Wallace, J. M.

AU - Kawakami, Y.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1992

Y1 - 1992

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AB - Laser diode structures have been fabricated using molecular beam epitaxy with iodine from an electrochemical source for the n-type doping and nitrogen from a plasma source for the p-type doping. CV profiling using electrochemical etching shows uniform p doping of 4×1017 cm-3 and n doping of 1×1018 cm-3. Under pulsed current excitation blue emission at 470 nm is observed at room temperature which increases in intensity at liquid helium temperatures. Above a current density threshold of 50 A cm-2 stimulated emission is observed between 448-473 nm with a complicated mode structure.

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U2 - 10.1063/1.107869

DO - 10.1063/1.107869

M3 - Article

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EP - 508

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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Wang SY, Hauksson I, Simpson J, Stewart H, Adams SJA, Wallace JM et al. Blue stimulated emission from a ZnSe p-n diode at low temperature. Applied Physics Letters. 1992;61(5):506-508. https://doi.org/10.1063/1.107869