Blue stimulated emission from a ZnSe p-n diode at low temperature

S. Y. Wang; I. Hauksson; J. Simpson; H. Stewart; S. J A Adams; J. M. Wallace; Y. Kawakami; K. A. Prior; B. C. Cavenett

doi:10.1063/1.107869

Blue stimulated emission from a ZnSe p-n diode at low temperature

S. Y. Wang, I. Hauksson, J. Simpson, H. Stewart, S. J A Adams, J. M. Wallace, Y. Kawakami, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Laser diode structures have been fabricated using molecular beam epitaxy with iodine from an electrochemical source for the n-type doping and nitrogen from a plasma source for the p-type doping. CV profiling using electrochemical etching shows uniform p doping of 4×10¹⁷ cm^-3 and n doping of 1×10¹⁸ cm^-3. Under pulsed current excitation blue emission at 470 nm is observed at room temperature which increases in intensity at liquid helium temperatures. Above a current density threshold of 50 A cm^-2 stimulated emission is observed between 448-473 nm with a complicated mode structure.

Original language	English
Pages (from-to)	506-508
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	5
DOIs	https://doi.org/10.1063/1.107869
Publication status	Published - 1992

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10.1063/1.107869

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title = "Blue stimulated emission from a ZnSe p-n diode at low temperature",

abstract = "Laser diode structures have been fabricated using molecular beam epitaxy with iodine from an electrochemical source for the n-type doping and nitrogen from a plasma source for the p-type doping. CV profiling using electrochemical etching shows uniform p doping of 4×1017 cm-3 and n doping of 1×1018 cm-3. Under pulsed current excitation blue emission at 470 nm is observed at room temperature which increases in intensity at liquid helium temperatures. Above a current density threshold of 50 A cm-2 stimulated emission is observed between 448-473 nm with a complicated mode structure.",

author = "Wang, {S. Y.} and I. Hauksson and J. Simpson and H. Stewart and Adams, {S. J A} and Wallace, {J. M.} and Y. Kawakami and Prior, {K. A.} and Cavenett, {B. C.}",

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doi = "10.1063/1.107869",

language = "English",

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journal = "Applied Physics Letters",

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T1 - Blue stimulated emission from a ZnSe p-n diode at low temperature

AU - Wang, S. Y.

AU - Hauksson, I.

AU - Simpson, J.

AU - Stewart, H.

AU - Adams, S. J A

AU - Wallace, J. M.

AU - Kawakami, Y.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1992

Y1 - 1992

N2 - Laser diode structures have been fabricated using molecular beam epitaxy with iodine from an electrochemical source for the n-type doping and nitrogen from a plasma source for the p-type doping. CV profiling using electrochemical etching shows uniform p doping of 4×1017 cm-3 and n doping of 1×1018 cm-3. Under pulsed current excitation blue emission at 470 nm is observed at room temperature which increases in intensity at liquid helium temperatures. Above a current density threshold of 50 A cm-2 stimulated emission is observed between 448-473 nm with a complicated mode structure.

AB - Laser diode structures have been fabricated using molecular beam epitaxy with iodine from an electrochemical source for the n-type doping and nitrogen from a plasma source for the p-type doping. CV profiling using electrochemical etching shows uniform p doping of 4×1017 cm-3 and n doping of 1×1018 cm-3. Under pulsed current excitation blue emission at 470 nm is observed at room temperature which increases in intensity at liquid helium temperatures. Above a current density threshold of 50 A cm-2 stimulated emission is observed between 448-473 nm with a complicated mode structure.

UR - http://www.scopus.com/inward/record.url?scp=0010593319&partnerID=8YFLogxK

U2 - 10.1063/1.107869

DO - 10.1063/1.107869

M3 - Article

SN - 0003-6951

VL - 61

SP - 506

EP - 508

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Blue stimulated emission from a ZnSe p-n diode at low temperature

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