Blue stimulated emission from a ZnSe p-n diode at low temperature

S. Y. Wang, I. Hauksson, J. Simpson, H. Stewart, S. J A Adams, J. M. Wallace, Y. Kawakami, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

Laser diode structures have been fabricated using molecular beam epitaxy with iodine from an electrochemical source for the n-type doping and nitrogen from a plasma source for the p-type doping. CV profiling using electrochemical etching shows uniform p doping of 4×1017 cm-3 and n doping of 1×1018 cm-3. Under pulsed current excitation blue emission at 470 nm is observed at room temperature which increases in intensity at liquid helium temperatures. Above a current density threshold of 50 A cm-2 stimulated emission is observed between 448-473 nm with a complicated mode structure.

Original languageEnglish
Pages (from-to)506-508
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number5
DOIs
Publication statusPublished - 1992

Fingerprint Dive into the research topics of 'Blue stimulated emission from a ZnSe p-n diode at low temperature'. Together they form a unique fingerprint.

  • Cite this

    Wang, S. Y., Hauksson, I., Simpson, J., Stewart, H., Adams, S. J. A., Wallace, J. M., Kawakami, Y., Prior, K. A., & Cavenett, B. C. (1992). Blue stimulated emission from a ZnSe p-n diode at low temperature. Applied Physics Letters, 61(5), 506-508. https://doi.org/10.1063/1.107869