Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy

I S Hauksson, Y Kawakami, Sz Fujita, Sg Fujita, Ian Galbraith, Kevin Alan Prior, B C Cavenett

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)2035-2040
Number of pages6
JournalJournal of Applied Physics
Volume83
Publication statusPublished - 1998

Cite this

Hauksson, I. S., Kawakami, Y., Fujita, S., Fujita, S., Galbraith, I., Prior, K. A., & Cavenett, B. C. (1998). Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy. Journal of Applied Physics, 83, 2035-2040.
Hauksson, I S ; Kawakami, Y ; Fujita, Sz ; Fujita, Sg ; Galbraith, Ian ; Prior, Kevin Alan ; Cavenett, B C. / Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy. In: Journal of Applied Physics. 1998 ; Vol. 83. pp. 2035-2040.
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language = "English",
volume = "83",
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Hauksson, IS, Kawakami, Y, Fujita, S, Fujita, S, Galbraith, I, Prior, KA & Cavenett, BC 1998, 'Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy', Journal of Applied Physics, vol. 83, pp. 2035-2040.

Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy. / Hauksson, I S; Kawakami, Y; Fujita, Sz; Fujita, Sg; Galbraith, Ian; Prior, Kevin Alan; Cavenett, B C.

In: Journal of Applied Physics, Vol. 83, 1998, p. 2035-2040.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy

AU - Hauksson, I S

AU - Kawakami, Y

AU - Fujita, Sz

AU - Fujita, Sg

AU - Galbraith, Ian

AU - Prior, Kevin Alan

AU - Cavenett, B C

PY - 1998

Y1 - 1998

M3 - Article

VL - 83

SP - 2035

EP - 2040

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

ER -

Hauksson IS, Kawakami Y, Fujita S, Fujita S, Galbraith I, Prior KA et al. Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy. Journal of Applied Physics. 1998;83:2035-2040.