Band structure and band offsets in Zn1-xCdxSe/ZnSe quantum wells

M. Livingstone; I. Galbraith

Band structure and band offsets in Zn_1-xCd_xSe/ZnSe quantum wells

M. Livingstone
, I. Galbraith

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The sensitivity of interband and intersubband transition energies to the valence-band offset in Zn_1-xCd_xSe/ZnSe quantum wells is investigated. Interconduction-band transition energies between the first two conduction subband levels is shown to give the optimum sensitivity. By using the valence-band offset, Q_v, as an adjustable parameter we are able to fit calculations to experiment and determine a Q_v value of 0.31. To calculate the band structure in the quantum well we use an 8 × 8 k · p method which takes into account valence-subband-mixing, nonparabolicity and strain effects.

Original language	English
Pages (from-to)	542-545
Number of pages	4
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
Publication status	Published - Feb 1996

Cite this

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title = "Band structure and band offsets in Zn1-xCdxSe/ZnSe quantum wells",

abstract = "The sensitivity of interband and intersubband transition energies to the valence-band offset in Zn1-xCdxSe/ZnSe quantum wells is investigated. Interconduction-band transition energies between the first two conduction subband levels is shown to give the optimum sensitivity. By using the valence-band offset, Qv, as an adjustable parameter we are able to fit calculations to experiment and determine a Qv value of 0.31. To calculate the band structure in the quantum well we use an 8 × 8 k · p method which takes into account valence-subband-mixing, nonparabolicity and strain effects.",

author = "M. Livingstone and I. Galbraith",

year = "1996",

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language = "English",

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journal = "Journal of Crystal Growth",

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T1 - Band structure and band offsets in Zn1-xCdxSe/ZnSe quantum wells

AU - Livingstone, M.

AU - Galbraith, I.

PY - 1996/2

Y1 - 1996/2

N2 - The sensitivity of interband and intersubband transition energies to the valence-band offset in Zn1-xCdxSe/ZnSe quantum wells is investigated. Interconduction-band transition energies between the first two conduction subband levels is shown to give the optimum sensitivity. By using the valence-band offset, Qv, as an adjustable parameter we are able to fit calculations to experiment and determine a Qv value of 0.31. To calculate the band structure in the quantum well we use an 8 × 8 k · p method which takes into account valence-subband-mixing, nonparabolicity and strain effects.

AB - The sensitivity of interband and intersubband transition energies to the valence-band offset in Zn1-xCdxSe/ZnSe quantum wells is investigated. Interconduction-band transition energies between the first two conduction subband levels is shown to give the optimum sensitivity. By using the valence-band offset, Qv, as an adjustable parameter we are able to fit calculations to experiment and determine a Qv value of 0.31. To calculate the band structure in the quantum well we use an 8 × 8 k · p method which takes into account valence-subband-mixing, nonparabolicity and strain effects.

UR - https://www.scopus.com/pages/publications/0030562221

M3 - Article

SN - 0022-0248

VL - 159

SP - 542

EP - 545

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Band structure and band offsets in Zn_1-xCd_xSe/ZnSe quantum wells

Abstract

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