Band structure and band offsets in Zn1-xCdxSe/ZnSe quantum wells

M. Livingstone, I. Galbraith

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The sensitivity of interband and intersubband transition energies to the valence-band offset in Zn1-xCdxSe/ZnSe quantum wells is investigated. Interconduction-band transition energies between the first two conduction subband levels is shown to give the optimum sensitivity. By using the valence-band offset, Qv, as an adjustable parameter we are able to fit calculations to experiment and determine a Qv value of 0.31. To calculate the band structure in the quantum well we use an 8 × 8 k · p method which takes into account valence-subband-mixing, nonparabolicity and strain effects.

Original languageEnglish
Pages (from-to)542-545
Number of pages4
JournalJournal of Crystal Growth
Volume159
Issue number1-4
Publication statusPublished - Feb 1996

Fingerprint Dive into the research topics of 'Band structure and band offsets in Zn<sub>1-x</sub>Cd<sub>x</sub>Se/ZnSe quantum wells'. Together they form a unique fingerprint.

Cite this