Band-gap-resonant nonlinear refraction in III-V semiconductors

D A B Miller; C T Seaton; M E Prise; Desmond Smith

doi:10.1103/PhysRevLett.47.197

Band-gap-resonant nonlinear refraction in III-V semiconductors

D A B Miller, C T Seaton, M E Prise, Desmond Smith

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

239 Citations (Scopus)

Abstract

We present experimental measurements of the resonance of the large intensity dependence of refractive index in InSb near the band-gap energy at 77 K and derive a semiempirical theory for this effect which fits the measurements well, both in absolute magnitude and wavelength dependence, using only measurable parameters. The size of the effect in other nondegenerate direct-band-gap III-V compound semiconductors and at other temperatures is predicted. © 1981 The American Physical Society.

Original language	English
Pages (from-to)	197-200
Number of pages	4
Journal	Physical Review Letters
Volume	47
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevLett.47.197
Publication status	Published - 1981

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title = "Band-gap-resonant nonlinear refraction in III-V semiconductors",

abstract = "We present experimental measurements of the resonance of the large intensity dependence of refractive index in InSb near the band-gap energy at 77 K and derive a semiempirical theory for this effect which fits the measurements well, both in absolute magnitude and wavelength dependence, using only measurable parameters. The size of the effect in other nondegenerate direct-band-gap III-V compound semiconductors and at other temperatures is predicted. {\textcopyright} 1981 The American Physical Society.",

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journal = "Physical Review Letters",

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AU - Miller, D A B

AU - Seaton, C T

AU - Prise, M E

AU - Smith, Desmond

PY - 1981

Y1 - 1981

N2 - We present experimental measurements of the resonance of the large intensity dependence of refractive index in InSb near the band-gap energy at 77 K and derive a semiempirical theory for this effect which fits the measurements well, both in absolute magnitude and wavelength dependence, using only measurable parameters. The size of the effect in other nondegenerate direct-band-gap III-V compound semiconductors and at other temperatures is predicted. © 1981 The American Physical Society.

AB - We present experimental measurements of the resonance of the large intensity dependence of refractive index in InSb near the band-gap energy at 77 K and derive a semiempirical theory for this effect which fits the measurements well, both in absolute magnitude and wavelength dependence, using only measurable parameters. The size of the effect in other nondegenerate direct-band-gap III-V compound semiconductors and at other temperatures is predicted. © 1981 The American Physical Society.

UR - https://www.scopus.com/pages/publications/0011109844

U2 - 10.1103/PhysRevLett.47.197

DO - 10.1103/PhysRevLett.47.197

M3 - Article

SN - 0031-9007

VL - 47

SP - 197

EP - 200

JO - Physical Review Letters

JF - Physical Review Letters

IS - 3

ER -

Band-gap-resonant nonlinear refraction in III-V semiconductors

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