Band-gap-resonant nonlinear refraction in III-V semiconductors

D A B Miller, C T Seaton, M E Prise, Desmond Smith

Research output: Contribution to journalArticle

Abstract

We present experimental measurements of the resonance of the large intensity dependence of refractive index in InSb near the band-gap energy at 77 K and derive a semiempirical theory for this effect which fits the measurements well, both in absolute magnitude and wavelength dependence, using only measurable parameters. The size of the effect in other nondegenerate direct-band-gap III-V compound semiconductors and at other temperatures is predicted. © 1981 The American Physical Society.

Original languageEnglish
Pages (from-to)197-200
Number of pages4
JournalPhysical Review Letters
Volume47
Issue number3
DOIs
Publication statusPublished - 1981

Fingerprint Dive into the research topics of 'Band-gap-resonant nonlinear refraction in III-V semiconductors'. Together they form a unique fingerprint.

  • Cite this

    Miller, D. A. B., Seaton, C. T., Prise, M. E., & Smith, D. (1981). Band-gap-resonant nonlinear refraction in III-V semiconductors. Physical Review Letters, 47(3), 197-200. https://doi.org/10.1103/PhysRevLett.47.197