Band anticrossing in dilute InNxSb1-x

B. N. Murdin; A. R. Adams; P. Murzyn; C. R. Pidgeon; I. V. Bradley; J. P R Wells; Y. H. Matsuda; N. Miura; T. Burke; A. D. Johnson

doi:10.1063/1.1493663

Band anticrossing in dilute InN_xSb_1-x

B. N. Murdin, A. R. Adams, P. Murzyn, C. R. Pidgeon, I. V. Bradley, J. P R Wells, Y. H. Matsuda, N. Miura, T. Burke, A. D. Johnson

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

Dilute nitrogen alloys of InSb exhibit extremely strong band gap bowing with nitrogen composition that has been associated with anticrossing between the localized resonant states of the nitrogen within the conduction band and the extended states of the conduction band itself. This also results in the conduction band dispersion having an enhanced nonparabolicity. We have measured the electron effective mass near the anticrossing by cyclotron resonance in InN_xSb_1-x alloys with absorption edge near 15 µm, using pulsed fields up to 150 T. The results directly demonstrate the band anticrossing and quantitatively confirm the increase of effective mass versus x predicted for InN_xSb_1-x by a tight binding calculation for low nitrogen concentration (x<0.01). © 2002 American Institute of Physics.

Original language	English
Pages (from-to)	256-258
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	2
DOIs	https://doi.org/10.1063/1.1493663
Publication status	Published - 8 Jul 2002

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10.1063/1.1493663

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title = "Band anticrossing in dilute InNxSb1-x",

abstract = "Dilute nitrogen alloys of InSb exhibit extremely strong band gap bowing with nitrogen composition that has been associated with anticrossing between the localized resonant states of the nitrogen within the conduction band and the extended states of the conduction band itself. This also results in the conduction band dispersion having an enhanced nonparabolicity. We have measured the electron effective mass near the anticrossing by cyclotron resonance in InNxSb1-x alloys with absorption edge near 15 µm, using pulsed fields up to 150 T. The results directly demonstrate the band anticrossing and quantitatively confirm the increase of effective mass versus x predicted for InNxSb1-x by a tight binding calculation for low nitrogen concentration (x<0.01). {\textcopyright} 2002 American Institute of Physics.",

author = "Murdin, {B. N.} and Adams, {A. R.} and P. Murzyn and Pidgeon, {C. R.} and Bradley, {I. V.} and Wells, {J. P R} and Matsuda, {Y. H.} and N. Miura and T. Burke and Johnson, {A. D.}",

year = "2002",

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doi = "10.1063/1.1493663",

language = "English",

volume = "81",

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TY - JOUR

T1 - Band anticrossing in dilute InNxSb1-x

AU - Murdin, B. N.

AU - Adams, A. R.

AU - Murzyn, P.

AU - Pidgeon, C. R.

AU - Bradley, I. V.

AU - Wells, J. P R

AU - Matsuda, Y. H.

AU - Miura, N.

AU - Burke, T.

AU - Johnson, A. D.

PY - 2002/7/8

Y1 - 2002/7/8

N2 - Dilute nitrogen alloys of InSb exhibit extremely strong band gap bowing with nitrogen composition that has been associated with anticrossing between the localized resonant states of the nitrogen within the conduction band and the extended states of the conduction band itself. This also results in the conduction band dispersion having an enhanced nonparabolicity. We have measured the electron effective mass near the anticrossing by cyclotron resonance in InNxSb1-x alloys with absorption edge near 15 µm, using pulsed fields up to 150 T. The results directly demonstrate the band anticrossing and quantitatively confirm the increase of effective mass versus x predicted for InNxSb1-x by a tight binding calculation for low nitrogen concentration (x<0.01). © 2002 American Institute of Physics.

AB - Dilute nitrogen alloys of InSb exhibit extremely strong band gap bowing with nitrogen composition that has been associated with anticrossing between the localized resonant states of the nitrogen within the conduction band and the extended states of the conduction band itself. This also results in the conduction band dispersion having an enhanced nonparabolicity. We have measured the electron effective mass near the anticrossing by cyclotron resonance in InNxSb1-x alloys with absorption edge near 15 µm, using pulsed fields up to 150 T. The results directly demonstrate the band anticrossing and quantitatively confirm the increase of effective mass versus x predicted for InNxSb1-x by a tight binding calculation for low nitrogen concentration (x<0.01). © 2002 American Institute of Physics.

U2 - 10.1063/1.1493663

DO - 10.1063/1.1493663

M3 - Article

SN - 0003-6951

VL - 81

SP - 256

EP - 258

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Band anticrossing in dilute InNxSb1-x

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Band anticrossing in dilute InN_xSb_1-x