Band anticrossing in dilute InNxSb1-x

B. N. Murdin, A. R. Adams, P. Murzyn, C. R. Pidgeon, I. V. Bradley, J. P R Wells, Y. H. Matsuda, N. Miura, T. Burke, A. D. Johnson

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55 Citations (Scopus)

Abstract

Dilute nitrogen alloys of InSb exhibit extremely strong band gap bowing with nitrogen composition that has been associated with anticrossing between the localized resonant states of the nitrogen within the conduction band and the extended states of the conduction band itself. This also results in the conduction band dispersion having an enhanced nonparabolicity. We have measured the electron effective mass near the anticrossing by cyclotron resonance in InNxSb1-x alloys with absorption edge near 15 µm, using pulsed fields up to 150 T. The results directly demonstrate the band anticrossing and quantitatively confirm the increase of effective mass versus x predicted for InNxSb1-x by a tight binding calculation for low nitrogen concentration (x<0.01). © 2002 American Institute of Physics.

Original languageEnglish
Pages (from-to)256-258
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number2
DOIs
Publication statusPublished - 8 Jul 2002

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