Auger recombination in long-wavelength infrared InNxSb1-x alloys

B. N. Murdin, M. Kamal-Saadi, A. Lindsay, E. P. O'Reilly, A. R. Adams, G. J. Nott, J. G. Crowder, C. R. Pidgeon, I. V. Bradley, J. P R Wells, T. Burke, A. D. Johnson, T. Ashley

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Abstract

Dilute nitrogen alloys of InSb exhibit strong band gap bowing with increasing nitrogen composition, shifting the absorption edge to longer wavelengths. The conduction band dispersion also has an enhanced nonparabolicity, which suppresses Auger recombination. We have measured Auger lifetimes in alloys with 11 and 15 µm absorption edges using a time-resolved pump-probe technique. We find the lifetimes to be longer at room temperature than equivalent band gap Hg1-yCdyTe alloys at the same quasi-Fermi level separation. The results are explained using a modified k·p Hamiltonian which explicitly includes interactions between the conduction band and a higher lying nitrogen-related resonant band. © 2001 American Institute of Physics.

Original languageEnglish
Pages (from-to)1568-1570
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number11
DOIs
Publication statusPublished - 12 Mar 2001

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    Murdin, B. N., Kamal-Saadi, M., Lindsay, A., O'Reilly, E. P., Adams, A. R., Nott, G. J., Crowder, J. G., Pidgeon, C. R., Bradley, I. V., Wells, J. P. R., Burke, T., Johnson, A. D., & Ashley, T. (2001). Auger recombination in long-wavelength infrared InNxSb1-x alloys. Applied Physics Letters, 78(11), 1568-1570. https://doi.org/10.1063/1.1355301