Auger recombination dynamics of InxGa1-xSb

P. C. Findlay, C. R. Pidgeon, H. Pellemans, R. Kotitschke, B. N. Murdin, T. Ashley, A. D. Johnson, A. M. White, C. T. Elliott

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The alloy In1-xGaxSb has been identified as potentially an important component in mid-infrared laser diodes which use band structure engineering of quantum structures based on the narrow-gap III-V material InSb. A pump-probe measurement has been made of carrier recombination in bulk In1-xGaxSb, for a range of alloy compositions. Over the range of excited carrier densities (5×1016-3×1017 cm-3) and at the temperatures (30-300 K) studied experimentally, contributions to the recombination from Auger, Shockley-Read-Hall and radiative mechanisms were calculated using an analytic approximation, with carrier degeneracy included. Excellent agreement with experiment was obtained over the alloy range x = 0.0-0.2 (corresponding to a room-temperature energy gap variation from 0.175 eV to 0.215 eV). Numerically the room-temperature Auger coefficient, C, decreased from the value 1.17×1026 cm6 s-1 at x = 0 (i.e. InSb) to 0.98×1026 cm6 s-1 at x = 0.2. The fact that C decreases with energy gap increase, in good agreement with theoretical predictions, is important for strained layer quantum well device applications.

Original languageEnglish
Pages (from-to)1026-1030
Number of pages5
JournalSemiconductor Science and Technology
Volume14
Issue number12
DOIs
Publication statusPublished - Dec 1999

Fingerprint Dive into the research topics of 'Auger recombination dynamics of In<sub>x</sub>Ga<sub>1-x</sub>Sb'. Together they form a unique fingerprint.

  • Cite this

    Findlay, P. C., Pidgeon, C. R., Pellemans, H., Kotitschke, R., Murdin, B. N., Ashley, T., Johnson, A. D., White, A. M., & Elliott, C. T. (1999). Auger recombination dynamics of InxGa1-xSb. Semiconductor Science and Technology, 14(12), 1026-1030. https://doi.org/10.1088/0268-1242/14/12/302