Auger recombination dynamics in highly excited HgCdTe

C. M. Ciesla; B. N. Murdin; T. J. Phillips; A. M. White; A. R. Beattie; C. J G M Langerak; C. T. Elliott; C. R. Pidgeon

doi:10.1002/1521-3951(199711)204:1<121::AID-PSSB121>3.0.CO;2-Q

Auger recombination dynamics in highly excited HgCdTe

C. M. Ciesla, B. N. Murdin, T. J. Phillips, A. M. White, A. R. Beattie, C. J G M Langerak, C. T. Elliott, C. R. Pidgeon

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We present quantitative experimental and theoretical results of Auger recombination in highly excited Hg_0.795Cd_0.205Te. The first direct measurement of carrier density dependence of the recombination processes has been made on a picosecond timescale, with the pump-probe technique using a free-electron laser. Over the excited carrier density range (5 × 10¹⁶ to 3 × 10¹⁷ cm^-3) and at temperatures from 50 to 295 K studied experimentally, contributions from Auger, Shockley-Read-Hall and radiative recombination mechanisms were calculated. The Auger recombination rates were evaluated using a compact analytic form, with carrier degeneracy included, which has been shown to agree closely with more accurate calculations. Excellent agreement was obtained, with Auger-1 dominant at all temperatures, and significantly for T > 225 K when the sample is intrinsic, the Auger-7 contribution was found to be important.

Original language	English
Pages (from-to)	121-124
Number of pages	4
Journal	Physica Status Solidi B - Basic Research
Volume	204
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(199711)204:1<121::AID-PSSB121>3.0.CO;2-Q
Publication status	Published - Nov 1997

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10.1002/1521-3951(199711)204:1<121::AID-PSSB121>3.0.CO;2-Q

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title = "Auger recombination dynamics in highly excited HgCdTe",

abstract = "We present quantitative experimental and theoretical results of Auger recombination in highly excited Hg0.795Cd0.205Te. The first direct measurement of carrier density dependence of the recombination processes has been made on a picosecond timescale, with the pump-probe technique using a free-electron laser. Over the excited carrier density range (5 × 1016 to 3 × 1017 cm-3) and at temperatures from 50 to 295 K studied experimentally, contributions from Auger, Shockley-Read-Hall and radiative recombination mechanisms were calculated. The Auger recombination rates were evaluated using a compact analytic form, with carrier degeneracy included, which has been shown to agree closely with more accurate calculations. Excellent agreement was obtained, with Auger-1 dominant at all temperatures, and significantly for T > 225 K when the sample is intrinsic, the Auger-7 contribution was found to be important.",

author = "Ciesla, {C. M.} and Murdin, {B. N.} and Phillips, {T. J.} and White, {A. M.} and Beattie, {A. R.} and Langerak, {C. J G M} and Elliott, {C. T.} and Pidgeon, {C. R.}",

year = "1997",

month = nov,

doi = "10.1002/1521-3951(199711)204:1<121::AID-PSSB121>3.0.CO;2-Q",

language = "English",

volume = "204",

pages = "121--124",

journal = "Physica Status Solidi B - Basic Research",

issn = "1521-3951",

publisher = "John Wiley and Sons Inc.",

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T1 - Auger recombination dynamics in highly excited HgCdTe

AU - Ciesla, C. M.

AU - Murdin, B. N.

AU - Phillips, T. J.

AU - White, A. M.

AU - Beattie, A. R.

AU - Langerak, C. J G M

AU - Elliott, C. T.

AU - Pidgeon, C. R.

PY - 1997/11

Y1 - 1997/11

N2 - We present quantitative experimental and theoretical results of Auger recombination in highly excited Hg0.795Cd0.205Te. The first direct measurement of carrier density dependence of the recombination processes has been made on a picosecond timescale, with the pump-probe technique using a free-electron laser. Over the excited carrier density range (5 × 1016 to 3 × 1017 cm-3) and at temperatures from 50 to 295 K studied experimentally, contributions from Auger, Shockley-Read-Hall and radiative recombination mechanisms were calculated. The Auger recombination rates were evaluated using a compact analytic form, with carrier degeneracy included, which has been shown to agree closely with more accurate calculations. Excellent agreement was obtained, with Auger-1 dominant at all temperatures, and significantly for T > 225 K when the sample is intrinsic, the Auger-7 contribution was found to be important.

AB - We present quantitative experimental and theoretical results of Auger recombination in highly excited Hg0.795Cd0.205Te. The first direct measurement of carrier density dependence of the recombination processes has been made on a picosecond timescale, with the pump-probe technique using a free-electron laser. Over the excited carrier density range (5 × 1016 to 3 × 1017 cm-3) and at temperatures from 50 to 295 K studied experimentally, contributions from Auger, Shockley-Read-Hall and radiative recombination mechanisms were calculated. The Auger recombination rates were evaluated using a compact analytic form, with carrier degeneracy included, which has been shown to agree closely with more accurate calculations. Excellent agreement was obtained, with Auger-1 dominant at all temperatures, and significantly for T > 225 K when the sample is intrinsic, the Auger-7 contribution was found to be important.

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U2 - 10.1002/1521-3951(199711)204:1<121::AID-PSSB121>3.0.CO;2-Q

DO - 10.1002/1521-3951(199711)204:1<121::AID-PSSB121>3.0.CO;2-Q

M3 - Article

SN - 1521-3951

VL - 204

SP - 121

EP - 124

JO - Physica Status Solidi B - Basic Research

JF - Physica Status Solidi B - Basic Research

IS - 1

ER -

Auger recombination dynamics in highly excited HgCdTe

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