We present quantitative experimental and theoretical results of Auger recombination in highly excited Hg0.795Cd0.205Te. The first direct measurement of carrier density dependence of the recombination processes has been made on a picosecond timescale, with the pump-probe technique using a free-electron laser. Over the excited carrier density range (5 × 1016 to 3 × 1017 cm-3) and at temperatures from 50 to 295 K studied experimentally, contributions from Auger, Shockley-Read-Hall and radiative recombination mechanisms were calculated. The Auger recombination rates were evaluated using a compact analytic form, with carrier degeneracy included, which has been shown to agree closely with more accurate calculations. Excellent agreement was obtained, with Auger-1 dominant at all temperatures, and significantly for T > 225 K when the sample is intrinsic, the Auger-7 contribution was found to be important.
|Number of pages||4|
|Journal||Physica Status Solidi B - Basic Research|
|Publication status||Published - Nov 1997|