Assessment of off-state negative gate voltage requirements for IGBTs

N. McNeill, S. J. Finney, B. W. Williams

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper addresses the need for negative gate bias with igbt devices that experience a dv/dt when in the off-state. Factors considered include gate bias voltage, gate impedance, reapplied dv/dt and case temperature. Experimental results for a high-voltage high-current igbt support the assessment of these factors.

Original languageEnglish
Title of host publicationProceedings of the 1996 27th Annual IEEE Power Electronics Specialists Conference, PESC. Part 1 (of 2)
Pages627-630
Number of pages4
Volume1
Publication statusPublished - 1996
Event1996 27th Annual IEEE Power Electronics Specialists Conference - Maggiore, Italy
Duration: 1 Jan 19961 Jan 1996

Publication series

NameIEEE Power Electronics Specialists Conference (PESC)
ISSN (Print)0275-9306

Conference

Conference1996 27th Annual IEEE Power Electronics Specialists Conference
CountryItaly
CityMaggiore
Period1/01/961/01/96

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  • Cite this

    McNeill, N., Finney, S. J., & Williams, B. W. (1996). Assessment of off-state negative gate voltage requirements for IGBTs. In Proceedings of the 1996 27th Annual IEEE Power Electronics Specialists Conference, PESC. Part 1 (of 2) (Vol. 1, pp. 627-630). (IEEE Power Electronics Specialists Conference (PESC)).