@inproceedings{ffa46e44af8644b88920fe836c45781d,
title = "Assessment of off-state negative gate voltage requirements for IGBTs",
abstract = "This paper addresses the need for negative gate bias with igbt devices that experience a dv/dt when in the off-state. Factors considered include gate bias voltage, gate impedance, reapplied dv/dt and case temperature. Experimental results for a high-voltage high-current igbt support the assessment of these factors.",
author = "N. McNeill and Finney, {S. J.} and Williams, {B. W.}",
year = "1996",
language = "English",
volume = "1",
series = "IEEE Power Electronics Specialists Conference (PESC)",
pages = "627--630",
booktitle = "Proceedings of the 1996 27th Annual IEEE Power Electronics Specialists Conference, PESC. Part 1 (of 2)",
note = "1996 27th Annual IEEE Power Electronics Specialists Conference ; Conference date: 01-01-1996 Through 01-01-1996",
}