Assessment of off-state negative gate voltage requirements for IGBT's

Neville McNeill; Kuang Sheng; Barry W. Williams; Stephen J. Finney

Assessment of off-state negative gate voltage requirements for IGBT's

Neville McNeill, Kuang Sheng, Barry W. Williams, Stephen J. Finney

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretical calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors. © 1998 IEEE.

Original language	English
Pages (from-to)	436-440
Number of pages	5
Journal	IEEE Transactions on Power Electronics
Volume	13
Issue number	3
Publication status	Published - 1998

Keywords

IGBT gate drives
IGBT's

Cite this

@article{5b3257266ba644279fe2b792aa940e15,

title = "Assessment of off-state negative gate voltage requirements for IGBT's",

abstract = "This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretical calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors. {\textcopyright} 1998 IEEE.",

keywords = "IGBT gate drives, IGBT's",

author = "Neville McNeill and Kuang Sheng and Williams, {Barry W.} and Finney, {Stephen J.}",

year = "1998",

language = "English",

volume = "13",

pages = "436--440",

journal = "IEEE Transactions on Power Electronics",

issn = "0885-8993",

publisher = "IEEE",

number = "3",

}

TY - JOUR

T1 - Assessment of off-state negative gate voltage requirements for IGBT's

AU - McNeill, Neville

AU - Sheng, Kuang

AU - Williams, Barry W.

AU - Finney, Stephen J.

PY - 1998

Y1 - 1998

N2 - This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretical calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors. © 1998 IEEE.

AB - This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretical calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors. © 1998 IEEE.

KW - IGBT gate drives

KW - IGBT's

UR - http://www.scopus.com/inward/record.url?scp=0032071796&partnerID=8YFLogxK

M3 - Article

SN - 0885-8993

VL - 13

SP - 436

EP - 440

JO - IEEE Transactions on Power Electronics

JF - IEEE Transactions on Power Electronics

IS - 3

ER -

Assessment of off-state negative gate voltage requirements for IGBT's

Abstract

Keywords

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