Assessment of off-state negative gate voltage requirements for IGBT's

Neville McNeill, Kuang Sheng, Barry W. Williams, Stephen J. Finney

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretical calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors. © 1998 IEEE.

Original languageEnglish
Pages (from-to)436-440
Number of pages5
JournalIEEE Transactions on Power Electronics
Volume13
Issue number3
Publication statusPublished - 1998

Keywords

  • IGBT gate drives
  • IGBT's

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