This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretical calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors. © 1998 IEEE.
|Number of pages||5|
|Journal||IEEE Transactions on Power Electronics|
|Publication status||Published - 1998|
- IGBT gate drives