INIS
semiconductor materials
100%
oxides
100%
metals
100%
doped materials
100%
junctions
100%
antimony
100%
arsenic
100%
strains
66%
depth
33%
solubility
33%
levels
16%
reduction
16%
devices
16%
increasing
16%
ions
16%
epitaxy
16%
sheets
16%
semiconductor devices
16%
electron mobility
16%
mass spectroscopy
16%
Material Science
Doping (Additives)
100%
Arsenic
100%
Metal Oxide
100%
Oxide Semiconductor
100%
Antimony
100%
Type Metal
100%
Complementary Metal-Oxide-Semiconductor Device
33%
Tensile Strain
33%
Secondary Ion Mass Spectrometry
33%
Mass Spectrometry
33%
Electron Mobility
33%
Engineering
Dopants
100%
Junction Depth
100%
Arsenic
100%
Metal Oxide Semiconductor
100%
Conductive
50%
Dopant Activation
50%
Complementary Metal-Oxide-Semiconductor Device
50%
Sheet Resistance
50%
Tensile Strain
50%
Chemistry
Doping Material
100%
Type Metal
100%
Antimony
100%
Metal Oxide
100%
Secondary Ion Mass Spectroscopy
33%
Donor
33%
Mass Spectrometry
33%
Electron Mobility
33%
Sheet Resistance
33%