Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: a superior dopant to arsenic?

Nick S Bennett, A. J. Smith, R. M. Gwilliam, R. P. Webb, B. J. Sealy, Nick E. B. Cowern, L. O'Reilly, P. J. McNally

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19 Citations (Scopus)


The creation of stable, highly conductive ultrashallow junctions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a strong contender to replace As as the dopant of choice due to advantages in junction depth, junction steepness, and crucially, sheet resistance. While 0.7% strain reduces resistance for both As and Sb, a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall and secondary-ion mass spectroscopy measurements suggest this to be a consequence of a strain-induced Sb solubility enhancement following epitaxial regrowth, increasing Sb solubility in Si to levels approaching 10(21) cm(-3). Advantages in junction depth, junction steepness, and dopant activation make Sb an interesting alternative to As for ultrashallow doping in strain-engineered complementary metal-oxide semiconductor devices. (c) 2008 American Vacuum Society.

Original languageEnglish
Pages (from-to)391-395
Number of pages5
JournalJournal Vacuum Science and Technology B
Issue number1
Publication statusPublished - Jan 2008
EventInternational Workshop on Insight in Semiconductor Device Fabrication, Metrology and Modeling - Napa, California, United States
Duration: 6 May 20079 May 2007


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