Abstract
The creation of stable, highly conductive ultrashallow junctions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a strong contender to replace As as the dopant of choice due to advantages in junction depth, junction steepness, and crucially, sheet resistance. While 0.7% strain reduces resistance for both As and Sb, a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall and secondary-ion mass spectroscopy measurements suggest this to be a consequence of a strain-induced Sb solubility enhancement following epitaxial regrowth, increasing Sb solubility in Si to levels approaching 10(21) cm(-3). Advantages in junction depth, junction steepness, and dopant activation make Sb an interesting alternative to As for ultrashallow doping in strain-engineered complementary metal-oxide semiconductor devices. (c) 2008 American Vacuum Society.
Original language | English |
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Pages (from-to) | 391-395 |
Number of pages | 5 |
Journal | Journal Vacuum Science and Technology B |
Volume | 26 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 2008 |
Event | International Workshop on Insight in Semiconductor Device Fabrication, Metrology and Modeling - Napa, California, United States Duration: 6 May 2007 → 9 May 2007 |
Keywords
- IMPLANTED SILICON
- SB
- RECRYSTALLIZATION
- REDISTRIBUTION
- SOLUBILITY