Analysis of a novel n-AlGaAs hot-electron optical modulator

B. S. Ryvkin, A. C. Walker, E. A. Avrutin

Research output: Contribution to conferencePaperpeer-review


An alternative solution based on the mechanism of the variation of interband optical absorption by current-induced carrier heating was analyzed. It makes use of electron heating in moderately n-doped bulk III-V materials, particularly AlGaAs. The calculations showed that a device fabricated from weakly degenerate GaAs gives an absorption variation about 3 times larger than that achievable in a strongly degenerate material studied.

Original languageEnglish
Publication statusPublished - 2000
Event2000 International Quantum Electronics Conference - Nice, France
Duration: 10 Sep 200015 Sep 2000


Conference2000 International Quantum Electronics Conference
Abbreviated titleIQEC 2000

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