Analysis of a novel n-AlGaAs hot-electron optical modulator

B. S. Ryvkin, A. C. Walker, E. A. Avrutin

Research output: Contribution to conferencePaper

Abstract

An alternative solution based on the mechanism of the variation of interband optical absorption by current-induced carrier heating was analyzed. It makes use of electron heating in moderately n-doped bulk III-V materials, particularly AlGaAs. The calculations showed that a device fabricated from weakly degenerate GaAs gives an absorption variation about 3 times larger than that achievable in a strongly degenerate material studied.

Original languageEnglish
Pages133
Publication statusPublished - 2000
Event2000 International Quantum Electronics Conference - Nice, France
Duration: 10 Sep 200015 Sep 2000

Conference

Conference2000 International Quantum Electronics Conference
Abbreviated titleIQEC 2000
CountryFrance
CityNice
Period10/09/0015/09/00

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    Ryvkin, B. S., Walker, A. C., & Avrutin, E. A. (2000). Analysis of a novel n-AlGaAs hot-electron optical modulator. 133. Paper presented at 2000 International Quantum Electronics Conference, Nice, France.