Analysis of a novel n-AlGaAs hot-electron optical modulator

B. S. Ryvkin; A. C. Walker; E. A. Avrutin

Analysis of a novel n-AlGaAs hot-electron optical modulator

B. S. Ryvkin, A. C. Walker, E. A. Avrutin

School of Engineering & Physical Sciences

Research output: Contribution to conference › Paper › peer-review

Abstract

An alternative solution based on the mechanism of the variation of interband optical absorption by current-induced carrier heating was analyzed. It makes use of electron heating in moderately n-doped bulk III-V materials, particularly AlGaAs. The calculations showed that a device fabricated from weakly degenerate GaAs gives an absorption variation about 3 times larger than that achievable in a strongly degenerate material studied.

Original language	English
Pages	133
Publication status	Published - 2000
Event	2000 International Quantum Electronics Conference - Nice, France Duration: 10 Sept 2000 → 15 Sept 2000

Conference

Conference	2000 International Quantum Electronics Conference
Abbreviated title	IQEC 2000
Country/Territory	France
City	Nice
Period	10/09/00 → 15/09/00

Cite this

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title = "Analysis of a novel n-AlGaAs hot-electron optical modulator",

abstract = "An alternative solution based on the mechanism of the variation of interband optical absorption by current-induced carrier heating was analyzed. It makes use of electron heating in moderately n-doped bulk III-V materials, particularly AlGaAs. The calculations showed that a device fabricated from weakly degenerate GaAs gives an absorption variation about 3 times larger than that achievable in a strongly degenerate material studied.",

author = "Ryvkin, {B. S.} and Walker, {A. C.} and Avrutin, {E. A.}",

year = "2000",

language = "English",

pages = "133",

note = "2000 International Quantum Electronics Conference, IQEC 2000 ; Conference date: 10-09-2000 Through 15-09-2000",

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TY - CONF

T1 - Analysis of a novel n-AlGaAs hot-electron optical modulator

AU - Ryvkin, B. S.

AU - Walker, A. C.

AU - Avrutin, E. A.

PY - 2000

Y1 - 2000

N2 - An alternative solution based on the mechanism of the variation of interband optical absorption by current-induced carrier heating was analyzed. It makes use of electron heating in moderately n-doped bulk III-V materials, particularly AlGaAs. The calculations showed that a device fabricated from weakly degenerate GaAs gives an absorption variation about 3 times larger than that achievable in a strongly degenerate material studied.

AB - An alternative solution based on the mechanism of the variation of interband optical absorption by current-induced carrier heating was analyzed. It makes use of electron heating in moderately n-doped bulk III-V materials, particularly AlGaAs. The calculations showed that a device fabricated from weakly degenerate GaAs gives an absorption variation about 3 times larger than that achievable in a strongly degenerate material studied.

UR - http://www.scopus.com/inward/record.url?scp=0033725035&partnerID=8YFLogxK

M3 - Paper

SP - 133

T2 - 2000 International Quantum Electronics Conference

Y2 - 10 September 2000 through 15 September 2000

ER -

Analysis of a novel n-AlGaAs hot-electron optical modulator

Abstract

Conference

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