An alternative solution based on the mechanism of the variation of interband optical absorption by current-induced carrier heating was analyzed. It makes use of electron heating in moderately n-doped bulk III-V materials, particularly AlGaAs. The calculations showed that a device fabricated from weakly degenerate GaAs gives an absorption variation about 3 times larger than that achievable in a strongly degenerate material studied.
|Published - 2000
|2000 International Quantum Electronics Conference - Nice, France
Duration: 10 Sept 2000 → 15 Sept 2000
|2000 International Quantum Electronics Conference
|10/09/00 → 15/09/00