An alternative solution based on the mechanism of the variation of interband optical absorption by current-induced carrier heating was analyzed. It makes use of electron heating in moderately n-doped bulk III-V materials, particularly AlGaAs. The calculations showed that a device fabricated from weakly degenerate GaAs gives an absorption variation about 3 times larger than that achievable in a strongly degenerate material studied.
|Publication status||Published - 2000|
|Event||2000 International Quantum Electronics Conference - Nice, France|
Duration: 10 Sep 2000 → 15 Sep 2000
|Conference||2000 International Quantum Electronics Conference|
|Abbreviated title||IQEC 2000|
|Period||10/09/00 → 15/09/00|