A Fourier transform IR (FTIR) study is reported of the TO band in SiC, observed at 800 cm-1 at each of the three stages leading to the formation of epitaxial diamond films on (100) single-crystal silicon. Due to the large oscillator strength of the TO band this technique can detect, in transmission, layers as thin as a few nanometres. The radial profile of the SiC band intensity across the wafer, formed during the initial carburization step, is radically altered after the bias step. Within the annular region of epitaxial growth, the SiC thickness exhibits a point of inflection. Following the growth of the epitaxial diamond film, the interfacial SiC thickness is reduced further. An average SiC thickness of a few nanometres is observed at the interface, although the thickness is greater in regions in which the azimuthal alignment of the (100) diamond crystallites is lost.
|Number of pages||5|
|Journal||Diamond and Related Materials|
|Publication status||Published - Apr 1996|
- Silicon carbide