An FTIR study of the heteroepitaxy of diamond on silicon

P. John, C. Graham, David Milne, M. G. Jubber, J. I B Wilson

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A Fourier transform IR (FTIR) study is reported of the TO band in SiC, observed at 800 cm-1 at each of the three stages leading to the formation of epitaxial diamond films on (100) single-crystal silicon. Due to the large oscillator strength of the TO band this technique can detect, in transmission, layers as thin as a few nanometres. The radial profile of the SiC band intensity across the wafer, formed during the initial carburization step, is radically altered after the bias step. Within the annular region of epitaxial growth, the SiC thickness exhibits a point of inflection. Following the growth of the epitaxial diamond film, the interfacial SiC thickness is reduced further. An average SiC thickness of a few nanometres is observed at the interface, although the thickness is greater in regions in which the azimuthal alignment of the (100) diamond crystallites is lost.

Original languageEnglish
Pages (from-to)256-260
Number of pages5
JournalDiamond and Related Materials
Volume5
Issue number3-5
Publication statusPublished - Apr 1996

Keywords

  • Diamond
  • Heteroepitaxy
  • Infrared
  • Silicon carbide

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