All-solid-state microscope-based system for picosecond time-resolved photoluminescence measurements on II-VI semiconductors

G. S. Buller; J. S. Massa; A. C. Walker

doi:10.1063/1.1142598

All-solid-state microscope-based system for picosecond time-resolved photoluminescence measurements on II-VI semiconductors

G. S. Buller, J. S. Massa, A. C. Walker

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

A novel, entirely solid-state, instrument has been developed for the study of time-resolved photoluminescence in a wide variety of bulk semiconductors, low-dimensional structures, and other materials. This system uses a frequency-doubled GaAlAs diode laser (pulse width 30 ps) as the 415-nm pump source and a silicon single-photon avalanche diode for detection of photoluminescence. The time-correlated single photon counting technique allows measurement of photoluminescence decays in the temporal region of 10 ps to >500 ns with high statistical accuracy. In addition, the combination of a microscope with a small-area detector provides a spatial resolution of <5 µm. This system is currently being used for the measurement of picosecond time-resolved photoluminescence from II-VI semiconductors.

Original language	English
Pages (from-to)	2994-2998
Number of pages	5
Journal	Review of Scientific Instruments
Volume	63
Issue number	5
DOIs	https://doi.org/10.1063/1.1142598
Publication status	Published - 1992

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10.1063/1.1142598

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title = "All-solid-state microscope-based system for picosecond time-resolved photoluminescence measurements on II-VI semiconductors",

abstract = "A novel, entirely solid-state, instrument has been developed for the study of time-resolved photoluminescence in a wide variety of bulk semiconductors, low-dimensional structures, and other materials. This system uses a frequency-doubled GaAlAs diode laser (pulse width 30 ps) as the 415-nm pump source and a silicon single-photon avalanche diode for detection of photoluminescence. The time-correlated single photon counting technique allows measurement of photoluminescence decays in the temporal region of 10 ps to >500 ns with high statistical accuracy. In addition, the combination of a microscope with a small-area detector provides a spatial resolution of <5 µm. This system is currently being used for the measurement of picosecond time-resolved photoluminescence from II-VI semiconductors.",

author = "Buller, {G. S.} and Massa, {J. S.} and Walker, {A. C.}",

year = "1992",

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AU - Walker, A. C.

PY - 1992

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AB - A novel, entirely solid-state, instrument has been developed for the study of time-resolved photoluminescence in a wide variety of bulk semiconductors, low-dimensional structures, and other materials. This system uses a frequency-doubled GaAlAs diode laser (pulse width 30 ps) as the 415-nm pump source and a silicon single-photon avalanche diode for detection of photoluminescence. The time-correlated single photon counting technique allows measurement of photoluminescence decays in the temporal region of 10 ps to >500 ns with high statistical accuracy. In addition, the combination of a microscope with a small-area detector provides a spatial resolution of <5 µm. This system is currently being used for the measurement of picosecond time-resolved photoluminescence from II-VI semiconductors.

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All-solid-state microscope-based system for picosecond time-resolved photoluminescence measurements on II-VI semiconductors

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