Bistability has been observed in the amplified optical signal passing through an active InGaAs strained quantumwell waveguide at a wavelength of 960 nm. The device, which contained a single 50-angstrom strained InGaAs well sandwiched between two 0.1-mu-m GaAs barrier layers, was electrically biased to 80% of the threshold current required for lasing.
|Number of pages||3|
|Journal||IEEE Photonics Technology Letters|
|Publication status||Published - Jun 1991|