Abstract
Bistability has been observed in the amplified optical signal passing through an active InGaAs strained quantumwell waveguide at a wavelength of 960 nm. The device, which contained a single 50-angstrom strained InGaAs well sandwiched between two 0.1-mu-m GaAs barrier layers, was electrically biased to 80% of the threshold current required for lasing.
Original language | English |
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Pages (from-to) | 507-509 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 3 |
Issue number | 6 |
Publication status | Published - Jun 1991 |