ALL-OPTICAL BISTABLE SWITCHING IN AN ACTIVE INGAAS QUANTUM-WELL WAVE-GUIDE

P  LIKAMWA; A  MILLER; M  OGAWA; R M  PARK

ALL-OPTICAL BISTABLE SWITCHING IN AN ACTIVE INGAAS QUANTUM-WELL WAVE-GUIDE

P LIKAMWA, A MILLER, M OGAWA, R M PARK

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Bistability has been observed in the amplified optical signal passing through an active InGaAs strained quantumwell waveguide at a wavelength of 960 nm. The device, which contained a single 50-angstrom strained InGaAs well sandwiched between two 0.1-mu-m GaAs barrier layers, was electrically biased to 80% of the threshold current required for lasing.

Original language	English
Pages (from-to)	507-509
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	3
Issue number	6
Publication status	Published - Jun 1991

Cite this

@article{1e185b1847064353ae58d6e5dd21b361,

title = "ALL-OPTICAL BISTABLE SWITCHING IN AN ACTIVE INGAAS QUANTUM-WELL WAVE-GUIDE",

abstract = "Bistability has been observed in the amplified optical signal passing through an active InGaAs strained quantumwell waveguide at a wavelength of 960 nm. The device, which contained a single 50-angstrom strained InGaAs well sandwiched between two 0.1-mu-m GaAs barrier layers, was electrically biased to 80% of the threshold current required for lasing.",

author = "P LIKAMWA and A MILLER and M OGAWA and PARK, {R M}",

year = "1991",

month = jun,

language = "English",

volume = "3",

pages = "507--509",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "IEEE",

number = "6",

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TY - JOUR

T1 - ALL-OPTICAL BISTABLE SWITCHING IN AN ACTIVE INGAAS QUANTUM-WELL WAVE-GUIDE

AU - LIKAMWA, P

AU - MILLER, A

AU - OGAWA, M

AU - PARK, R M

PY - 1991/6

Y1 - 1991/6

N2 - Bistability has been observed in the amplified optical signal passing through an active InGaAs strained quantumwell waveguide at a wavelength of 960 nm. The device, which contained a single 50-angstrom strained InGaAs well sandwiched between two 0.1-mu-m GaAs barrier layers, was electrically biased to 80% of the threshold current required for lasing.

AB - Bistability has been observed in the amplified optical signal passing through an active InGaAs strained quantumwell waveguide at a wavelength of 960 nm. The device, which contained a single 50-angstrom strained InGaAs well sandwiched between two 0.1-mu-m GaAs barrier layers, was electrically biased to 80% of the threshold current required for lasing.

M3 - Article

SN - 1041-1135

VL - 3

SP - 507

EP - 509

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 6

ER -

ALL-OPTICAL BISTABLE SWITCHING IN AN ACTIVE INGAAS QUANTUM-WELL WAVE-GUIDE

Abstract

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