Abstract
We propose and analyze a promising surface-normal optical modulator for use in optical interconnects. The device is based on n-AlGaAs materials, operating with red light, and is therefore fully compatible with silicon photodetectors. The operation principle is based on current-induced electron heating, with redistribution of carriers between conduction band valleys playing a significant part. Calculations predict efficient absorption modulation with operating voltages <1 V and switching times of units of picoseconds. © 2000 American Institute of Physics.
| Original language | English |
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| Pages (from-to) | 2060-2062 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 77 |
| Issue number | 13 |
| Publication status | Published - 25 Sept 2000 |